close menu
Bookswagon-24x7 online bookstore
close menu
My Account
Home > Science, Technology & Agriculture > Electronics and communications engineering > Electronics engineering > The Science and Engineering of Microelectronic Fabrication
The Science and Engineering of Microelectronic Fabrication

The Science and Engineering of Microelectronic Fabrication

          
5
4
3
2
1

Available


Premium quality
Premium quality
Bookswagon upholds the quality by delivering untarnished books. Quality, services and satisfaction are everything for us!
Easy Return
Easy return
Not satisfied with this product! Keep it in original condition and packaging to avail easy return policy.
Certified product
Certified product
First impression is the last impression! Address the book’s certification page, ISBN, publisher’s name, copyright page and print quality.
Secure Checkout
Secure checkout
Security at its finest! Login, browse, purchase and pay, every step is safe and secured.
Money back guarantee
Money-back guarantee:
It’s all about customers! For any kind of bad experience with the product, get your actual amount back after returning the product.
On time delivery
On-time delivery
At your doorstep on time! Get this book delivered without any delay.
Quantity:
Add to Wishlist
X

About the Book

The Science and Engineering of Microelectronic Fabrication provides an introduction to microelectronic processing. Geared towards a wide audience, it may be used as a textbook for both first year graduate and upper level undergraduate courses and as a handy reference for professionals. The text covers all the basic unit processes used to fabricate integrated circuits including photolithography, plasma and reactive ion etching, ion implantation, diffusion, oxidation, evaporation, vapour phase epitaxial growth, sputtering and chemical vapour deposition. Advanced processing topics such as rapid thermal processing, nonoptical lithography, molecular beam epitaxy, and metal organic chemical vapour deposition are also presented. The physics and chemistry of each process is introduced along with descriptions of the equipment used for the manufacturing of integrated circuits. The text also discusses the integration of these processes into common technologies such as CMOS, double poly bipolar, and GaAs MESFETs. Complexity/performance tradeoffs are evaluated along with a description of the current state-of-the-art devices. Each chapter includes sample problems with solutions. The book also makes use of the process simulation package SUPREM to demonstrate impurity profiles of practical interest.

Table of Contents:
Preface. Section I Overview and Materials. 1: Overview of Semiconductor Fabrication. 1.1: Introduction. 1.2: Layered Technologies: A Simple Example. 1.3: Unit Processes. 1.4: Technologies Overview. 1.5: A Roadmap for the Course. 2: Semiconductor Substrates. 2.1: Phase Diagrams and Solid Solubility. 2.2: Crystallography and Crystal Structure. 2.3: Crystal Defects. 2.4: Czochralski Growth. 2.5: Bridgman Growth of GaAs. 2.6: Float-Zone Growth. 2.7: Wafer Preparation and Specifications. 2.8: Summary and Future Trends. Section II Unit Process I: Hot Processing and Ion Implantation. 3: Diffusion. 3.1: Fick's Diffusion Equation in One Dimension. 3.2: Atomistic Models of Diffusion. 3.3: Analytic Solutions of Fick's Law. 3.4: Corrections to the iSimple asdf;. 3.5: Diffusion Codefficients for Common Dopants. 3.6: Analysis of Diffused Profiles. 3.7: Diffusion in SiO2. 3.8: Diffusion Systems. 3.9: SUPREM Simulations of Diffusion Profiles. 3.10: Summary. 4: Thermal Oxidation. 4.1: The Deal-Grove Model of Oxidation. 4.2: The Linear and Parabolic Rate Coefficients. 4.3: The Initial Oxidiation Regime. 4.4: The Structure of SiO2. 4.5: Oxide Characterization. 4.6: The Effects of Dopants on Oxidation and Polysilicon Oxidatation. 4.7: Oxidation Induced Stacking Faults. 4.8: Alternative Thermal Dielectrics. 4.9: Oxidation Systems. 4.10: SUPREM III Oxidations. 4.11: Summary. 5: Ion Implantation. 5.1: Idealized Ion Implant Systems. 5.2: Coulomb Scattering. 5.3: Vertical Projection Range. 5.4: Channeling and lteral Projected Range. 5.5: Implantation Damage. 5.6: Shallow Junction Formation. 5.7: Buried Dielectrics. 5.8: Ion Implant Systems - Problems and Concerns. 5.9: Implanted Profiles Using SUPREM III. 5.10: Summary. 6: Rapid Thermal Processing. 6.1: Gray Body Radiation, Heat Exchange and Optical Absorption. 6.2: High Intensity Optical Sources and the Reflecting Cavity. 6.3: Temperature Measurement. 6.4: Thermoplastic Stress. 6.5: Rapid Thermal Activation of Impurities. 6.6: Rapid Thermal Processing of Dielectrics. 6.7: Silicidation and Contact Formation. 6.8: Advanced Systems. 6.9: Summary. Section III Unit Processes 2: Pattern Transfer. 7: Optical Exposure Tools. 7.1: Lithography Overview. 7.2: Diffraction. 7.3: The Modulation Transfer Function and Optical Exposures. 7.4: Source Systems and Spatial Coherence. 7.5: Contact/Proximity Printers. 7.6: Projection Printers. 7.7: Advanced Mask Concepts. 7.8: Surface Reflections and Standing Waves. 7.9: Alignment. 7.10: Summary. 8: Photoresists. 8.1: Photoresist Types. 8.2: Organic Materials and Polymers. 8.3: Typical Reactions of DQN Positive Photoresists. 8.4: Contrast Curves. 8.5: The Critical Modultaion Transfer Function. 8.6: Applying and Developing Photoresist. 8.7: Second Order Exposure Effects. 8.8: Advanced Photoresists and Photoresist Processes. 8.9: Summary. 9: Nonoptical Lithographic Techniques. 9.1: Interaction of a High Energy Beam With Matter. 9.2: Electron Beam Lithography Systems. 9.3: Electron Beam Lithography Summary and Outlook. 9.4: X-Ray Sources. 9.5: X-Ray Exposure Systems. 9.6: X-Ray Masks. 9.7: Summary and Outlook for X-Ray Lithography. 9.8: E-Beam and X-Ray Resists. 9.9: Radiation Damage in MOS Devices. 9.10: Summary. 10: Vacuum Science and Plasmas. 10.1: The Kinetic Theory of Gases. 10.2: Gas Flow and Conductance. 10.3: Pressure Ranges and Vacuum Pumps. 10.4: Vacuum Seals and Pressure Measurement. 10.5: The DC Glow Discharge. 10.6: RF Discharge. 10.7: Magnetically Enhanced and ECR Plasmas. 10.8: Radiation from Accelerated Charged Particles. 10.9: Summary. 11: Etching. 11.1: Wet Etching. 11.2: Basic Regimes of Plasma Etching. 11.3: High Pressure Plasma Etching. 11.4: Ion Milling. 11.5: Reactive Ion Etching. 11.6: Damage in Reactive Ion Etching. 11.7: Magnetically Enhaned Reactive Ion Etch (MERIE) Systems. 11.8: Lift Off. 11.9: Summary. Section IV Unit Processing 3: Thin Film Deposition and Epitaxial Growth. 12: Physical Deposition: Evaporation and Sputtering. 12.1: Phase Diagrams: Sublimation and Evaporation. 12.2: Deposition Rates. 12.3: Step Coverage. 12.4: Evaporator Systems: Crucible Heating Techniques. 12.5: Multicomponent Films. 12.6: An Introduction to Sputtering. 12.7: Physics of Sputtering. 12.8: Deposition Rate: Ion Yield. 12.9: Magnetron Sputtering. 12.10: Morphology and Step Coverage. 12.11: Sputtering Methods. 12.12: Sputtering of Specific Materials. 12.13: Stress in Deposited Layers. 12.14: Summary. 13: Chemical Vapor Deposition. 13.1: Types of Chemical Reactions. 13.2: Chemical Equilibrium and the Law of Mass Action. 13.3: Gas Flow and Boundary Layers. 13.4: CVD Process Requirements. 13.5: Low Pressure CVD Processes. 13.6: Plasma Enhanced CVD. 13.7: Photon Assisted and Laser Induced CVD. 13.8: Characterization of CVD Dielectrics. 13.9: Metal CVD. 13.10: Summary. 14: Exitaxial Growth. 14.1: Wafer Cleaning and Native Oxide Removal. 14.2: The Thermodynamics of Growth. 14.3: Surface Reactions. 14.4: Dopant Incorporation. 14.5: Defects in Epitaxial Growth. 14.6: Selective Growth. 14.7: Halide Transport GaAs Vapor Phase Epitaxy. 14.8: Incommensurate and Strained Layer Heteroepitaxy. 14.9: Metal Organic Chemical Vapor Deposition (MOCVD). 14.10: Advanced Silicon Vapor Phase Epitaxial Growth Techniques. 14.11: Molecular Beam Epitaxy Technology. 14.12: BCF Theory. 14.13: Gas Source MBE and Chemical Beam Epitaxy. 14.14: Summary. Section V Process Integration. 15: Device Isolation, Contacts, and Metalization. 15.1: Junction and Oxide Isolation. 15.2: LOCOS Methods. 15.3: Trench Isolation. 15.4: Silicon on Insulator Isolation Techniques. 15.5: Semi-insulation Substrates. 15.6: Schottky Contacts. 15.7: Implanted Ohmic Contacts. 15.8: Alloyed Contacts. 15.9: Multilevel Metallization. 15.10: Planarization. 15.11: Summary. 16: CMOS Process Flows. 16.1: Basic Long Channel Device Behavior. 16.2: Early MOS Technologies. 16.3: The Basic Three Micron Technology. 16.4: Device Scaling. 16.5: Hot Carrier Effects and Drain Engineering. 16.6: Latchup. 16.7: Summary. 17: GaAs FET Technologies. 17.1: MESFET Device Operation. 17.2: Basic MESFET Technology. 17.3: Digital Technologies. 17.4: MMIC Technologies. 17.5: MODFETs. 17.6: Summary. 18: Silicon Bipolar Techniques. 18.1: Review of Bipolar Devices - Ideal and Quasi Ideal Behavior. 18.2: Second Order Effects. 18.3: Performance of BJT's. 18.4: Early Bipolar Processes. 18.5: Advance Bipolar Processes. 18.6: Hot Electron Effects in Bipolar Transistors. 18.7: BiCMOS. 18.8: Analog Bipolar Techniques. 18.9: Summary. 19: Integrated Circuit Manufacturing. 19.1: Yield and Yield Tracking. 19.2: Particle Control. 19.3: Statistical Process Control. 19.4: Full Factorial Experiments and ANOVA. 19.5: Design of Experiments. 19.6: Computer Integrated Manufacturing. 19.7: Summary. Appendices. I: List of Symbols and Acronyms. II: Properties of Selected Semiconductor Materials. III: Physical Constants. IV: Conversion Factors. V: The Complimentary Error Function. VI: F Values


Best Sellers



Product Details
  • ISBN-13: 9780195105087
  • Publisher: Oxford University Press Inc
  • Publisher Imprint: Oxford University Press Inc
  • Language: English
  • ISBN-10: 0195105087
  • Publisher Date: 29 Feb 1996
  • Binding: Hardback
  • Returnable: N


Similar Products

How would you rate your experience shopping for books on Bookswagon?

Add Photo
Add Photo

Customer Reviews

REVIEWS           
Click Here To Be The First to Review this Product
The Science and Engineering of Microelectronic Fabrication
Oxford University Press Inc -
The Science and Engineering of Microelectronic Fabrication
Writing guidlines
We want to publish your review, so please:
  • keep your review on the product. Review's that defame author's character will be rejected.
  • Keep your review focused on the product.
  • Avoid writing about customer service. contact us instead if you have issue requiring immediate attention.
  • Refrain from mentioning competitors or the specific price you paid for the product.
  • Do not include any personally identifiable information, such as full names.

The Science and Engineering of Microelectronic Fabrication

Required fields are marked with *

Review Title*
Review
    Add Photo Add up to 6 photos
    Would you recommend this product to a friend?
    Tag this Book
    Read more
    Does your review contain spoilers?
    What type of reader best describes you?
    I agree to the terms & conditions
    You may receive emails regarding this submission. Any emails will include the ability to opt-out of future communications.

    CUSTOMER RATINGS AND REVIEWS AND QUESTIONS AND ANSWERS TERMS OF USE

    These Terms of Use govern your conduct associated with the Customer Ratings and Reviews and/or Questions and Answers service offered by Bookswagon (the "CRR Service").


    By submitting any content to Bookswagon, you guarantee that:
    • You are the sole author and owner of the intellectual property rights in the content;
    • All "moral rights" that you may have in such content have been voluntarily waived by you;
    • All content that you post is accurate;
    • You are at least 13 years old;
    • Use of the content you supply does not violate these Terms of Use and will not cause injury to any person or entity.
    You further agree that you may not submit any content:
    • That is known by you to be false, inaccurate or misleading;
    • That infringes any third party's copyright, patent, trademark, trade secret or other proprietary rights or rights of publicity or privacy;
    • That violates any law, statute, ordinance or regulation (including, but not limited to, those governing, consumer protection, unfair competition, anti-discrimination or false advertising);
    • That is, or may reasonably be considered to be, defamatory, libelous, hateful, racially or religiously biased or offensive, unlawfully threatening or unlawfully harassing to any individual, partnership or corporation;
    • For which you were compensated or granted any consideration by any unapproved third party;
    • That includes any information that references other websites, addresses, email addresses, contact information or phone numbers;
    • That contains any computer viruses, worms or other potentially damaging computer programs or files.
    You agree to indemnify and hold Bookswagon (and its officers, directors, agents, subsidiaries, joint ventures, employees and third-party service providers, including but not limited to Bazaarvoice, Inc.), harmless from all claims, demands, and damages (actual and consequential) of every kind and nature, known and unknown including reasonable attorneys' fees, arising out of a breach of your representations and warranties set forth above, or your violation of any law or the rights of a third party.


    For any content that you submit, you grant Bookswagon a perpetual, irrevocable, royalty-free, transferable right and license to use, copy, modify, delete in its entirety, adapt, publish, translate, create derivative works from and/or sell, transfer, and/or distribute such content and/or incorporate such content into any form, medium or technology throughout the world without compensation to you. Additionally,  Bookswagon may transfer or share any personal information that you submit with its third-party service providers, including but not limited to Bazaarvoice, Inc. in accordance with  Privacy Policy


    All content that you submit may be used at Bookswagon's sole discretion. Bookswagon reserves the right to change, condense, withhold publication, remove or delete any content on Bookswagon's website that Bookswagon deems, in its sole discretion, to violate the content guidelines or any other provision of these Terms of Use.  Bookswagon does not guarantee that you will have any recourse through Bookswagon to edit or delete any content you have submitted. Ratings and written comments are generally posted within two to four business days. However, Bookswagon reserves the right to remove or to refuse to post any submission to the extent authorized by law. You acknowledge that you, not Bookswagon, are responsible for the contents of your submission. None of the content that you submit shall be subject to any obligation of confidence on the part of Bookswagon, its agents, subsidiaries, affiliates, partners or third party service providers (including but not limited to Bazaarvoice, Inc.)and their respective directors, officers and employees.

    Accept

    New Arrivals



    Inspired by your browsing history


    Your review has been submitted!

    You've already reviewed this product!
    ASK VIDYA