Peter L.F. Hemment

Peter L.F. Hemment, B.Sc., Ph.D., D.Sc., Eur.Ing., C.Phys., C.Eng., F.Inst.P., FIEE, MIEEE. Professor Peter Hemment has more than 30 years' experience in silicon technology with special emphasis on the role of ion beams both for the modification ad analysis of semiconductors and related materials. During the 1980s he initiated and managed projects to develop the process of ion beam synthesis and is internationally recognised for his contributions to SOI/SIMOX technology. He focused upon understanding the physics and chemistry of oxygen implanted silicon. With colleagues he pioneered the use of very high temperature anneals to achieve complete phase separation leading to the creation of planar structures which transformed SIMOX materials from being a scientific novelty to an economically viable manufacturing technology. Subsequently he has researched multilayer and non-continuous SOI structures together with the synthesis of SiGe and SiGeC layers. He collaborates with academic and industrial groups and keenly promotes international cooperation.