This reference provides detailed information which enables you to quickly understand the physics and modeling of mainstream devices. Packed with nearly 1,000 equations and 396 illustrations.

Table of Contents:
Semiconductor device fundamentals - energy band theory, statistics of free carriers in semiconductors, generation and recombination processes, Boltzmann transport equation, drift and diffusion mechanisms, carrier scattering mechanisms, basic semiconductor device equations, Monte Carlo simulation; physics and models related to p/n junctions - description of p/n junctions, ambipolar transport equation, Linvill lumped circuit model, Sah transmission line circuit model, current and avalanche breakdown in reverse-biased junctions, tunnelling currents in p/n junctions, charge storage in p/n junctions, abrupt heterojunction diodes, abrupt heterojunctions with a setback layer, graded heterojunctions, references, problems; bipolar junction transistors - steady-state characteristics under forward-active operation, current-voltage characteristics including saturation and current-induced base pushout, effect of quasineutral base width modulation, effect of nonuniform doping concentration, avalanche multiplication in bipolar transistor, multidimensional effects, poly-emitter bipolar transistors, switching speed of BJTs, large- and small-signal models, references, problems; junction field-effect transistors - general theory, current-voltage characteristics of three-terminal JFETs, current-voltage characteristics of four-terminal JFETs, short-channel JFETs, large-and small-signal models, references, problems; metal-oxide-semiconductor field-effect devices - metal-oxide-semiconductor (MOS) diodes, metal-oxide semiconductor field-effect transistors (MOSFET), numerical and experimental results, hot-carrier effects, capacitance of intrinsic MOSFET, MOSFET equivalent circuit, references, problems; metal-semiconductor junction devices - Schottky diodes, ohmic contacts, metal-semiconductor field-effect transistors (MESFET), references, problems; heterojunction bipolar and field-effect transistors - single heterojunction bipolar transistors, abrupt HBTs with a setback layer, HBTs with a graded uunction, double heterojunction bipolar transistors, heterojunction field-effect transistors, references, problems; solar cells - basic concept, homojunction solar cells, heterojunction in solar cells, effect of V-groove surface on solar cell performance, references, problems; photoconductive diodes - device structure and concept, general theories, conductivity and current, effect of contact regions, two-dimensional analysis, transient behaviour of photoconductive diodes, references, problems.