Diffusion in Crystalline Solids addresses some of the most active areas of research on diffusion in crystalline solids. Topics covered include measurement of tracer diffusion coefficients in solids, diffusion in silicon and germanium, atom transport in oxides of the fluorite structure, tracer diffusion in concentrated alloys, diffusion in dislocations, grain boundary diffusion mechanisms in metals, and the use of the Monte Carlo Method to simulate diffusion kinetics. This book is made up of eight chapters and begins with an introduction to the measurement of diffusion coefficients with radioisotopes. The following three chapters consider diffusion in materials of substantial technological importance such as silicon and germanium. Atomic transport in oxides of the fluorite structure is described, and diffusion in concentrated alloys, including intermetallic compounds, is analyzed. The next two chapters delve into diffusion along short-circuiting paths, focusing on the effect of diffusion down dislocations on the form of the tracer concentration profile. The book also discusses the mechanisms of diffusion in grain boundaries in metals by invoking considerable work done on grain-boundary structure. The last two chapters are concerned with computer simulation, paying particular attention to machine calculations and the Monte Carlo method. The book concludes by exploring the fundamental atomic migration process and presenting some state-of-the-art calculations for defect energies and the topology of the saddle surface. Students and researchers of material science will find this book extremely useful.

Table of Contents:
List of ContributorsForewordPreface1. The Measurement of Tracer Diffusion Coefficients in Solids I. Introduction II. Preparation of Diffusion Samples III. Annealing of Diffusion Samples IV. Sectioning and Microsectioning V. Counting of Radioactive Sections VI. Determination of D from a Penetration Plot VII. Conclusions References 2. Diffusion in Silicon and Germanium I. Introduction II. Basic Features of Bulk Diffusion in Crystalline Solids III. Self-Diffusion and Related Phenomena IV. Survey of Foreign-Atom Diffusion V. Oxidation-Influenced Diffusion of Group III and Group V Elements in Silicon VI. A Barrier against Vacancy-Interstitial Recombination VII. Diffusion of Group III and Group V Elements and Its Dependence on Doping VIII. Anomalous Diffusion Phenomena IX. Substitutional-Interstitial Interchange Diffusion and Application to Gold and Nickel in Silicon and to Copper in Germanium X. Concluding Remarks References3. Atom Transport in Oxides of the Fluorite Structure I. Introduction II. Diffusion Studies III. Conductivity and Relaxation IV. Comparison of Ionic Conductivity and Oxygen Diffusion References 4. Tracer Diffusion in Concentrated Alloys I. Introduction II. Theoretical Background III. Empirical Rules IV. Theoretical Considerations of the Kinetics of Diffusion in Random Alloys V. Tracer Diffusion Experiments in Primary (Terminal) Phases VI. Theoretical Considerations of Diffusion in Ordered Structures VII. Tracer Diffusion Experiments in Intermediate Phases VIII. Conclusions References 5. The Mathematical Analysis of Diffusion in Dislocations I. Introduction II. The Dislocation Model III. Solutions of the Diffusion Equations IV. Properties of the Solutions Appendix A. Derivation of Eq. (39) Appendix B. The Poles of Eq. (39) for the Case of the Dislocation Array Appendix C. Numerical Considerations in the Calculation of Q{?, e/a) Appendix D. Numerical Considerations in the Calculation of Q(?) Appendix E. An Order of Magnitude Estimate of ? References 6. Grain Boundary Diffusion Mechanisms in Metals I. Introduction II. The Diffusion Spectrum III. Present Knowledge of the Structure of Grain Boundaries and Their Line and Point Defects IV. Review of Experiments Relevant to the Atom Jumping Mechanism in Boundaries V. Model for Atom Jumping in Boundaries VI. Influence of Boundary Structure on Boundary Diffusion VII. Diffusion along Migrating Boundaries VIII. Model for Grain Boundaries as Point Defect Sources and Sinks and Comparison with Experimental Observations IX. Conclusions References 377. Simulation of Diffusion Kinetics with the Monte Carlo Method I. Introduction II. Tracer Diffusion III. Ionic Conductivity IV. Chemical Diffusion V. Conclusions References 8. Defect Calculations beyond the Harmonic Model I. Introduction II. Lattice Dynamics III. Vacancy Formation in fee Lennard-Jones Crystals IV. Vacancy Migration V. Analytical Treatment of Anharmonic Jump Frequency VI. Conclusions ReferencesIndex