Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors. The book fills a crucial gap between solid-state physics and more specialized course texts. The authors first present introductory concepts, including basic semiconductor theory, defect classifications, crystal growth, and doping. They then explain electrical, vibrational, optical, and thermal properties. Moving on to characterization approaches, the text concludes with chapters on the measurement of electrical properties, optical spectroscopy, particle-beam methods, and microscopy. By treating dopants and defects in semiconductors as a unified subject, this book helps define the field and prepares students for work in technologically important areas. It provides students with a solid foundation in both experimental methods and the theory of defects in semiconductors.

Table of Contents:
Semiconductor Basics Historical Overview Crystal Structure Phonons Band Structure Electrons and Holes Optical Properties Electronic Transport Examples of Semiconductors Devices Defect Classifications Structure and Symmetry Energy Levels Examples of Native Defects Examples of Nonhydrogenic Impurities Dislocations Metal-Semiconductor Junctions The Metal-Oxide-Semiconductor (MOS) Junction Crystal Growth and Doping Bulk Crystal Growth Dopant Incorporation during Bulk Crystal Growth Thin Film Growth Liquid Phase Epitaxy (LPE) Chemical Vapor Deposition (CVD) Molecular Beam Epitaxy (MBE) Alloying Doping by Diffusion Ion Implantation Annealing and Dopant Activation Neutron Transmutation Electronic Properties Hydrogenic Model Wave Function Symmetry Donor and Acceptor Wave Functions Deep Levels Carrier Concentrations as a Function of Temperature Freeze-Out Curves Scattering Processes Impurity Conduction Spintronics Vibrational Properties Phonons Defect Vibrational Modes Infrared Absorption Interactions and Lifetimes Raman Scattering Wave Functions and Symmetry Oxygen in Silicon and Germanium Impurity Vibrational Modes in GaAs Hydrogen Vibrational Modes Optical Properties Free-Carrier Absorption and Reflection Lattice Vibrations Dipole Transitions Band-Gap Absorption Carrier Dynamics Exciton and Donor–Acceptor Emission Isoelectronic Impurities Lattice Relaxation Transition Metals Thermal Properties Defect Formation Charge State and Chemical Potential Diffusion Microscopic Mechanisms of Diffusion Self-Diffusion Dopant Diffusion Quantum-Well Intermixing Electrical Measurements Resistivity and Conductivity Methods of Measuring Resistivity Hall Effect P-n and Schottky Junctions Capacitance–Voltage (C–V) Profiling Carrier Generation and Recombination Deep-Level Transient Spectroscopy (DLTS) Minority Carriers and Deep-Level Transient Spectroscopy (DLTS) Minority Carrier Lifetime Thermoelectric Effect Optical Spectroscopy Absorption Emission Raman Spectroscopy Fourier Transform Infrared (FTIR) Spectroscopy Photoconductivity Time-Resolved Techniques Applied Stress Electron Paramagnetic Resonance (EPR) Optically Detected Magnetic Resonance (ODMR) Electron Nuclear Double Resonance (ENDOR) Particle-Beam Methods Rutherford Backscattering Spectrometry (RBS) Ion Range Secondary Ion Mass Spectrometry (SIMS) X-Ray Emission X-Ray Absorption Photoelectric Effect Electron Beams Positron Annihilation Muons Perturbed Angular Correlation Spectroscopy (PACS) Nuclear Reactions Microscopy and Structural Characterization Optical Microscopy Scanning Electron Microscopy (SEM) Cathodoluminescence (CL) Electron Beam Induced Current (EBIC) Microscopy Diffraction Transmission Electron Microscopy (TEM) Scanning Probe Microscopy (SPM) Physical Constants References appear at the end of each chapter.