About the Book
Study of Electronic Materials and Components Classification of materials based on bandgaps; Types of resistors-fixed, variable and precision etc. like carbon film, metal film, wire wound, cermets, Their standard values specifications and applications, Classification of capacitors based on dielectrics, Standard values, Specifications and applications of capacitors, Types of capacitors-electrolytic, ceramic, paper, mica, tantalum, plastic film etc. Study of different core materials depending on rage of frequencies for inductors and transformers; semiconductor materials, Si, Ge, AIII - BV compounds their properties. Semiconductor Physics Electrical properties of Ge and Si materials like intrinsic concentration, mobility, conductivity, energy gap, etc. Law of mass action, Generation and recombination of free charges (Holes/electrons). Diffusion phenomenon, Concentration gradient, Einstein relationship, Volt equivalent of temperature, Total current (drift and diffusion) potential variation within continuous and step graded semiconductor, i.e. p-n junction. Semiconductor Diode Characteristics Current components in forward biased / reverse biased p-n junction diode; cut-in voltage, Reverse saturation current, Derivation of V/I characteristics (logarithmic) equation of diode, Temperature dependence of diode characteristics, Concepts and significance of expressions of transition and diffusion capacitance, Junction diode switching times. Semiconductor Diode as Circuit Element p-n junction as rectifier, Half-wave, Full-wave and bridge rectifier with and without capacitor filter, Other types of filters-choke input and L section filters, Parameters like ripple factor, Efficiency, TUF, PIV, IFmax, Isurage, etc. Derivations of ripple factor for L, C and L section filter, Bleeder resistor, Calculations for bridge rectifier with C filter for specified load voltage / current and ripple. Diode as a waveshaping element in clipping and clamping circuits, Voltage multipliers. BJT-Characteristics, Biasing Circuits and Bias Stability BJT as a two-port device, Configurations of BJT (CE/CB/CC), Input-output and transfer characteristics in all three configurations with relevant V-I expressions and definitions of d.c. current gains, Concept of load line and Q point with active, Cut-off and saturation regions of operations of BJT. Early effect, Punch through effect, Fixed collector feedback and self bias circuits for CE transistor, Definitions of stability factors for CE transistor and their derivations for above circuits; bias stabilization and compensation techniques, Condition to avoid thermal runaway. Absolute maximum rating of BJT as referred to datasheets. BJT as Small Signal LF Amplifier Small signal LF-h parameter model in CE/CB/CC configuration; concept of A.C. equivalent circuit of single stage amplifier need of coupling and bypass capacitors; analysis CE/CB/CC amplifier for Ai, Av, Ri and Ro in terms of h-parameters; simplified h-parameter model; effect of biasing and source resistance on performance on single stage amplifier, Concept of frequency response. Field Effect Transistor Construction of p-channel and n-channel JFET/D-MOSFET/E-MOSFET; output and transfer characteristics of each with definitions of parameters like gm, rd and ? ; biasing techniques for all types, Small signal LF model of FET; analysis of CS/CD/CG amplifier for voltage gain and input-output impedance; comparison of BJT/JFET and MOSFET frequency response for FET amplifier. Absolute maximum rating/specification of FET as referred to datasheet. Special Semiconductor Devices Construction, Principle of operation; functional description with characteristics of each of the following devices; LED, Photo-diode, Photo-transistor, Photo-conductive cell, Photo-voltaic cell, Opto-isolator/coupler, LCD; applications of each.
