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Future Trends in Microelectronics: Frontiers and Innovations(Wiley – IEEE)

Future Trends in Microelectronics: Frontiers and Innovations(Wiley – IEEE)

          
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About the Book

This seventh volume of Future Trends in Microelectronics summarizes and synthesizes the high-level scientific discussions from top experts in academia, industry, and government. It includes 29 contributor chapters covering everything from new physical principles (quantum computing, topological insulators) to new materials (extreme electron concentration oxides, terahertz plasmas) to emerging device technologies (embedded magnetic memories, high-performance light emitting diodes). This holistic vision of semiconductor microelectronics enables readers to move forward with research in an informed, efficient, and profitable manner.

Table of Contents:
Preface ix S. Luryi, J. M. Xu and A Zaslavsky I INNOVATIONS IN ELECTRONICS AND SYSTEMS 1 Technology Innovation, Reshaping the Microelectronics Industry 4 K. Kim and U.-I. Chung Challenges and Limits for Very Low Energy Computation 49 F. Balestra Getting Rid of the DRAM Capacitor 59 N. Rodriguez, F. Gamiz and S. Cristoloveanu Physics and Design of Nanoscale Field Effect Diodes for Memory and ESD Protection Applications 73 D. E. Ioannou, Z. Chbili, A. Z. Badwan, Q. Li, Y. Yang and A. A. Salman Sharp-Switching CMOS-Compatible Devices with High Current Drive 81 J. Wan, S. Cristoloveanu, S. T. Le, A. Zaslavsky, C. Le Royer, S. A. Dayeh, D. E. Perea and S. T. Picraux Magnetic Tunnel Junctions with a Composite Free layer: A New Concept for Future Universal memory 93 A. Makarov, V. Sverdlov and S. Selberherr Silicon Carbide High Temperature Electronics Is This Rocket Science? 102 C. M. Zetterling Microchip Post-Processing: There is Plenty of Room at the Top 110 J. Schmitz EUV Lithography: Today and Tomorrow 120 V. Y. Banine Manufacturability and Nanoelectronic Performance 133 M. J. Kelly II OPTOELECTRONICS IN THE NANO AGE 139 Ultrafast Nanophotonic Devices For Optical Interconnects 142 N. N. Ledentsov, V. A. Shchukin and J. A. Lott Will Optical Communications Meet the Challenges of the Future? 160 D. K. Mynbaev Optical Antennae for Optoelectronics: Impacts, Promises, and Limitations 173 H. Mohseni Spin Modulation: Teaching Lasers New Tricks 183 J. Lee, G. Boeris, R. Oszwaldowski, K. Vyborny, C. Gothgen and I ?uti Silicon Photovoltaics: Accelerating to Grid Parity 194 M. R. Pinto Two- and Three-Dimensional Numerical Simulation of Advanced Silicon Solar Cells 210 E. Sangiorgi, M. Zanuccoli, R. De Rose, P. Magnone and C. Fiegna Mechanical Energy harvesting with Piezoelectric Nanostructures: Great Expectations for Autonomous Systems 230 G. Ardila, R. Hinchet, L. Montes and M. Mouis Charged Quantum Dots for Photovoltaic Conversion and IR Sensing 244 A. Sergeev, V. Mitin, N. Vagidov and K. Sablon Active Optomecjanical Resonators 254 D. Princepe, L. Barea, G. O. Luiz, G. Wiederhecker and N. C. Frateschi IV PHYSICS FRONTIERS 263 State of the Art and Prospects for Quantum Computing 266 M. I. Dyakonov Wireless, Implantable Neuroprosthesis: Applying Advanced Technology to Untether the Mind 286 D. A. Borton and A. V. Nurmikko Correlated Electrons: A Platform for Solid State Devices 300 S. D. Ha, Y. Zhou, R. Jaramillo and S. Ramanathan Graphene-Based Integrated Electronic, Photonic and Spintronic Circuit 308 A. D. Guclu, P. Potasz and P. Hawrylak Luttinger Liquid Behavior of Long GaAs Quantum Wires 319 E. Levy, I. Sternfeld, M. Eshkol, M. Karpovski, A. Palevski, B. Dwir, A. Rudra, E. Kapon and Y. Oreg Toward Spin Electronic Devices Based on Semiconductor Nanowires 328 S. Heedt, I. Wehrmann, K. Weis, H. Hardtdegen, D. Grutzmacher, Th. Schapers, C. Morgan, D. E. Burgler and R. Calarco An Alternative Path for the Fabrication of Self-Assembled III-Nitride Nanowires 340 A. Haab, M. Mikulics, T. Stoica, B. Kardynal, A. Winden, H. Hardtdegen, D. Grutzmacher and E. Sutter InAs Nanowires with Surface States as Building Blocks for Tube-Like Electrical Sensing Transitors 351 N. V. Demarina, M. I. Lepsa and D. Grutzmacher Levy Flight of Photoexcited Minority Carriers in Moderately Doped Semiconductors: Theory and Observation 359 A. Subashiev and S. Luryi Terahertz Plasma Oscillations in Field Effect transistors: Main Ideas and Experimental Facts 373 W. Knap and M. I. Dyakonov INDEX 395


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Product Details
  • ISBN-13: 9781118442166
  • Publisher: John Wiley & Sons Inc
  • Publisher Imprint: John Wiley & Sons Inc
  • Depth: 25
  • Height: 243 mm
  • No of Pages: 424
  • Series Title: Wiley – IEEE
  • Sub Title: Frontiers and Innovations
  • Width: 164 mm
  • ISBN-10: 1118442164
  • Publisher Date: 28 May 2013
  • Binding: Hardback
  • Edition: Reprint
  • Language: English
  • Returnable: Y
  • Spine Width: 27 mm
  • Weight: 708 gr


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