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Gallium Arsenide III: (Volume 18 Retrospective Collection)

Gallium Arsenide III: (Volume 18 Retrospective Collection)

          
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About the Book

Table of Contents:
Empirical Relations for Tetrahedrally Coordinated Semiconductors Evidence for the Dislocation-Induced Deep Traps in GaAs X-Ray Diffractometry of Very Thin LPE InGaAsP and InP Layers Low Temperature Photoluminescence Characterization of Acceptors in Vapour Phase Epitaxial GaAs Deep Levels in Sl GaAs Crystals by Spectral Photoconductivity and Photoluminescence Deep Levels in GaAs1-XPX under High Hydrostatic Pressure Ion Beam Bombardment Induced Composition Changes at the GaAs Surface Investigated by AES Photoluminescence Study of Ge-Doped GaAs Grown by Liquid-Phase Epitaxy Dopant Influence on Structure Perfection of GaAs Single Crystals Dislocation Density of Doped GaAs Single Crystals Grown by HB Method Pecularities of Point Defects Structure in Single Crystals of InP:HALL Data Dynamics of Avalanche-Like Electron Heating, Relaxation Oscillations and Chaotic Response Behaviour in Multilayer Heterostructures Hole Transport in GaSb with Isovalent Doping by In and N The Influence of Barrier Unintentional Impurities on Characteristics of Two Dimensional Electron Gas at GaAs/AlGaAs Heterojunction The Novel Nonquilibrium Electron-Hole System at GaAs-Electrolyte Interface Transport Effects in Space Grown p-Type GaSb Crystals Transport Coefficients for Non Polar Optical Phonon Scattering X-Ray Topographic Investigation of Dislocations in Horizontal Bridgman Grown GaAs Crystals Photoelastic Investigation of Czochralski-Grown [100] Oriented GaAs Crystals The X-Ray Investigation of Defects in Heavy Indium Doped GaAs Crystals Photoluminescence Topography of GaAs:Si Single Crystal Bismuth-Related Band in LPE GaAs EM Investigation of the Fine Defects Formation Processes in A3B5 Crystals X-Ray Diffraction Study of AIIIBV Materials Monte Carlo Study of Real-Space Electron Transfer: Energy Exchange between Heterostructure Layers Hot-Electron Transport in Multilayer InP-InGaAsP Heterostructure The Application of the Monte-Carlo Method to Physical Phenomena Modelling in Optoelectronic Devices (with LED as an Example) Miscibility GAPS in III-V Alloys: An Explanation Observation of Immiscibility in InGaPAs on GaAs Substrates Effect of Exchange Interaction on the Features of MnGa Center in GaAs GaAs MBE-Grown Delta-NIPI Superlattices: Observation of Quantum-Confined Optical Transitions in Photocurrent Spectra Growth Mechanism of Thin AlGaAs and InGaAsP Layers Diffusion of Zinc into III-V Compounds in Open Gas-Flow System The Czochralski Growth of GaSb Single Crystals Rapid Thermal Annealing of Neutron Transmutation Doped GaAs GaAs Lift-Off Metallization by Electron Beam Evaporation Features of GaAs Disordering by Nitrogen Ion Implantation The Silicon Nitride Layers Prepared by PE CVD for GaAs IC Technology Short Time Annealing of GaAs Implanted with Si, Ge, Sn, Se, S, Te ECR-Silicon Nitride for Masking of GaAs Surface The Ion Implantation through Thin Dielectric Layer Composition and Properties of Some Low Temperature Oxide Layers on GaAs (001) in MBE Technology Passivating Films on the AIIIBV Substrate Surfaces Some Properties of the Isoelectronically Doped GaAs Crystals Grown by the Gradient Freeze Method Microdefects in the Heavily Silicon Doped GaAs Crystals Grown by the Gradient Freeze Method Properties and Technology Features of Neutron Transmutation Doped Gallium Arsenide Preparation and Properties of Reactively Sputtered TiN Films for Diffusion Barriers on GaAs Rapid Thermal Annealing of Si-Implanted GaAs Using an Overpressure Proximity Method Contribution to Ion Implantation of Ge in GaAs Influence of Nintrogen Ion Implantation on Electrical Properties of Si Implanted Layers in GaAs The Growth of High Purity GaAs by Liquid Phase Epitaxy The Influence of Postimplantation Annealing on Stresses in GaAs Wafers MO CVD of GaAs Preparation of Undoped InGaAs/InP LPE Layers The Application of Thermodynamics to CVD Processes of A(III)B(V) Semiconductors Zn Diffusion in InGaAs The Influence of Dual Implantation on Electrical Parameters of GaAs for MMICs Photochemical Etching of n-GaAs Description of a Technological Laser Usable for Preparation of Ohmic Contacts to n-GaAs by Graded GAP Heterojunction Method Modeling of High-Speed GaAs Devices Technology and Characterization of a Submicrometer Gate Length GaAs MESFETs Effect of Substrate on Physical Properties of GaAs MESFETs Microwave Monolithic Integrated Circuits on GaAs The Influence of Technological Parameters on the Microwave Properties of Low Noise GaAs-MESFETs Study of GaAs Vertical Buried-Gate Field-Effect Transistor Self-Formation for High Speed MESFET Fabrication Domination of the Thermionic-Field Emission in the Reverse I-V Characteristics of n-Type GaAs-Cr/Au Schottky Junctions Schottky Barrier Height of Metal/(P)Ga0.47In0.53As Structures The Effect of the Near-Interface Concentration Change on the C-V Characteristics of GaAs Schottki Contacts The Analysis of Parasitic Effects and their Influence on Performance of GaAs MESFETs A Model of GaAs MESFET Effect of Varactor Bonding and Package Parameters on the Performance of Gunn-Oscillators Preparation and Properties of GaAs Double-Schottkiy-Interdigitated Photodetectors Planar Photodetectors: Construction and Properties GaAs - A Favourable Material for Optoelectronic Switches with Picosecond Response Time Linear Photovolatic Effect in Gallium Arsenide in Submillimeter Wavelength Region Electrical and Photoelectric Properties of GaAs Permeable-Base Transistor Reliability Diagnostics and Reliable Laser Design 1.3 and 1.55 μM Wavelength GaInAsP/InP DC PBH Lasers Comparison of Basic Parameters of Some Available Pulsed Semiconductor Lasers Sources and Detectors of Radiation Based on GaSb for 2 μm Range Temperature Stimulation of Degration Processes in GaAs0.6P0.4 LEDs TV Investigation of the Spontaneous Radiation in (Ga,Al)As Laser Diodes Hall Generators on GaAs:Si(:Se,:Sn)


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Product Details
  • ISBN-13: 9780878495863
  • Publisher: Trans Tech Publications Ltd
  • Publisher Imprint: Trans Tech Publications Ltd
  • Height: 240 mm
  • No of Pages: 380
  • Spine Width: 19 mm
  • Width: 170 mm
  • ISBN-10: 087849586X
  • Publisher Date: 01 Jan 1991
  • Binding: Paperback
  • Language: English
  • Series Title: Volume 18 Retrospective Collection
  • Weight: 1000 gr


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