Volume is indexed by Thomson Reuters CPCI-S (WoS).
The aim of this collection of peer-reviewed papers is to promote the open discussion of SiC hetero-epitaxy as related to the possibility of growing SiC on other materials and of growing various SiC polytypes so as to take advantage of the possibilities of band-gap engineering, These proceedings present the latest developments in Silicon Carbide, and the prospects for Gallium Nitride (GaN on Si, SiC, sapphire and free-standing) and Diamond power electronics. Finally, the progress made in Graphene technology, such as its introduction into devices and its relationship to SiC epitaxial material, is considered.

• Preface, Sponsors and Committees
• Chapter 1: SiC Heteroepitaxial Growth
• Progress in 3C-SiC Growth and Novel Applications
• Elimination of Twin Boundaries when Growing 3C-SiC Heteroepitaxial by Vapour-Liquid-Solid Mechanism on Patterned 4H-SiC Substrate
• CVD Growth of 3C-SiC on 4H-SiC Substrate
• The Influence of C₃H₈ and CBr₄ on Structural and Morphological Properties of 3C-SiC Layers
• Structural Characterization of Heteroepitaxial 3C-SiC
• Consideration on the Thermal Expansion of 3C-SiC Epitaxial Layer on Si Substrates
• Epitaxial Growth of 3C-SiC onto Silicon Substrate by VLS Transport Using CVD-Grown 3C-SiC Seeding Layer
• Chapter 2: Microsystems and Microstructures Based on SiC
• Study of 3C-SiC Mechanical Resonators, Filters and Mixers
• Mechanical Proprieties and Residual Stress Evaluation on Heteroepitaxial 3C-SiC/Si for MEMS Application
• Strain Field Analysis of 3C-SiC Free-Standing Microstructures by Micro-Raman and Theoretical Modelling
• Elaboration of Monocrystalline Si Thin Film on 3C-SiC(100)/Si Epilayers by Low Pressure Chemical Vapor Deposition
• Fabrication of SiC Nanopillars by Inductively Coupled SF₆/O₂ Plasma
• Material Limitations for the Development of High Performance SiC NWFETs
• Selective β-SiC/SiO₂ Core-Shell NW Growth on Patterned Silicon Substrate
• High Frequency 3C-SiC AFM Cantilever Using Thermal Actuation and Metallic Piezoresistive Detection
• Detailed Experimental Study of Mean and Gradient Stresses in Thin 3C-SiC Films Performed Using Micromachined Cantilevers
• Chapter 3: Devices on SiC
• High Quality 3C-SiC Substrate for MOSFET Fabrication
• Characterization of Band Diagrams of Different Metal-SiO₂-SiC(3C) Structures
• Design of Digital Electronics for High Temperature Using Basic Logic Gates Made of 4H-SiC MESFETs
• The Influence of Gate Material, SiO₂ Fabrication Method and Gate Edge Effect on Interface Trap Density in 3C-SiC MOS Capacitors
• Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour
• Visible and Deep Ultraviolet Study of SiC/SiO₂ Interface
• High Temperature Capability of High Voltage 4H-SiC JBS
• Parallel and Serial Association of SiC Light Triggered Thyristors
• Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs
• Chapter 4: Characterization: Devices and Material
• Structural Characterization of Graphene Grown by Thermal Decomposition of Off-Axis 4H-SiC (0001)
• Seeding Layer Influence on the Low Temperature Photoluminescence Intensity of 3C-SiC Grown on 6H-SiC by Sublimation Epitaxy
• Dose Influence on Physical and Electrical Properties of Nitrogen Implantation in 3C-SiC on Si
• On Applicability of Time-Resolved Optical Techniques for Characterization of Differently Grown 3C-SiC Crystals and Heterostructures
• Low Temperature Photoluminescence Investigation of 3-Inch SiC Wafers for Power Device Applications
• Investigations on Ni-Ti-Al Ohmic Contacts Obtained on P-Type 4H-SiC
• Evaluation of Correct Value of Richardson's Constant by Analyzing the Electrical Behavior of Three Different Diodes at Different Temperatures
• Ti Thickness Influence for Ti/Ni Ohmic Contacts on N-Type 3C-SiC
• Investigation of Al-Ti Ohmic Contact to N-Type 4H-SiC
• Barrier Inhomogeneities of a Medium Size Mo/4H-SiC Schottky Diode
• Chapter 5: GaN: Devices and Material
• MOCVD Grown AlGaN/GaN Transistors on Si Substrate for High Power Device Applications
• Microstructure and Transport Properties in Alloyed Ohmic Contacts to P-Type SiC and GaN for Power Devices Applications
• Investigations on the Origin of the Ohmic Behavior for Ti/Al Based Contacts on n-Type GaN
• Si⁺ Implantation and Activation in GaN Comparison of GaN on Sapphire and GaN on Silicon
• Comprehensive Analysis of Process Variability on AlGaN/GaN HEMTs through TCAD Simulations
• GaN-on-Silicon Evaluation for High-Power MMIC Applications
• Comparison of Electrical Behavior of GaN-Based MOS Structures Obtained by Different PECVD Process
• Chapter 6: Graphene
• Almost Free Standing Graphene on SiC(000-1) and SiC(11-20)
• Transmission-Electron-Microscopy Observations on the Growth of Epitaxial Graphene on 3C-SiC(110) and 3C-SiC(100) Virtual Substrates
• Graphene Nano-Biosensors for Detection of Cancer Risk
• Graphene/SiC Interface Control Using Propane-Hydrogen CVD on 6H-SiC(0001) and 3C-SiC(111)/Si(111)