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Home > Science, Technology & Agriculture > Technology: general issues > Hydride Vapor Phase Epitaxy of Aluminum Nitride: (English)
Hydride Vapor Phase Epitaxy of Aluminum Nitride: (English)

Hydride Vapor Phase Epitaxy of Aluminum Nitride: (English)

          
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About the Book

AlN is a promising substrate material for AlGaN-based UV optoelectronic devices and high-power, high-frequency electronic devices. Since large-area bulk AlN crystals are not readily available, one approach to prepare AlN substrates is to heteroepitaxially deposit thick (e.g., 10-300+ mum) AlN layers by hydride vapor phase epitaxy. Initial efforts focused on growing AlN layers on sapphire substrates with growth rates up to 75 mum/hr. The resulting layers were colorless, smooth, and specular. Subsurface cracking, attributed to the plastic relief of tensile strain from island coalescence, was observed but did not adversely affect the surface morphology of the AlN layers. The surfaces possessed rms roughnesses as low as 0.316 nm over 5 x 5 mum2 sampling areas, but hexagonal hillock formation was observed for thick films grown at high growth rates. TEM revealed that the threading dislocation (TD) density of the films was 2 x 109 cm-2. The high TD densities for direct growth of AlN films on foreign substrates motivated the development of lateral epitaxial overgrowth approaches for defect reduction. Growth of AlN layers on patterned SiC substrates produced coalesced AlN films possessing TD densities below 8.3 x 106 cm -2 in the laterally grown wing regions, as compared to 1.8 x 109 cm-2 in the seed regions. These films, however, cracked on cooldown due to the difference in thermal expansion coefficients for AlN and SiC. To avoid this cracking, AlN layers were grown on patterned sapphire substrates. Although the films were able to be coalesced and contained few or no cracks, the TDs in these films were not confined to the seed regions. This produced a relatively uniform distribution of TDs over the surfaces of the films, with only a modest reduction in the TD density of 1 x 10 8 cm-2. Selective area growth of AlN was also pursued using Si3N4, SiO2, and Ti masks. Growth selectivity and film coalescence was observed for films grown on each masking material, but none of the masks resulted in films with both smooth surface morphologies and low TD densities.


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Product Details
  • ISBN-13: 9781243494849
  • Publisher: Proquest, Umi Dissertation Publishing
  • Publisher Imprint: Proquest, Umi Dissertation Publishing
  • Height: 254 mm
  • No of Pages: 166
  • Series Title: English
  • Weight: 340 gr
  • ISBN-10: 1243494840
  • Publisher Date: 01 Sep 2011
  • Binding: Paperback
  • Language: English
  • Returnable: N
  • Spine Width: 11 mm
  • Width: 203 mm


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