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Home > Mathematics and Science Textbooks > Physics > Laplace Transform Deep Level Transient Spectroscopic Study on Pld Grown Zno: (English)
Laplace Transform Deep Level Transient Spectroscopic Study on Pld Grown Zno: (English)

Laplace Transform Deep Level Transient Spectroscopic Study on Pld Grown Zno: (English)

          
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About the Book

This dissertation, "Laplace Transform Deep Level Transient Spectroscopic Study on PLD Grown ZnO" by Lok-ping, Ho, 何樂平, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: The fundamental physics and techniques employed in Laplace transform deep level transient spectroscopy (L-DLTS) are reviewed. A Laplace-DLTS system has been constructed. The high resolving power of this system has been demonstrated experimentally. The L-DLTS system was applied to characterize the defects in undoped n-type ZnO thin film grown by the pulsed laser deposition (PLD) method. A 0.3 eV deep trap has been identified. The formations of Ec-0.39eV and Ec-0.20eVcan be enhanced when the sample surface is seriously damaged by high temperature annealing.AnEc-0.25eV trap is identified in the freshly grown samples, but would disappear after the storage of 3 months. Copper doped n-type ZnO thin film samples with low carrier concentration (n 〖10〗 DEGREES16 〖cm〗 DEGREES(-3)) were investigated by using both conventional and Laplace DLTS techniques. Positive DLTS signal peaks were detected that are suspected to be contributed by the minority carrier (hole carrier) emission. A physics model involving the inversion layer of a metal-insulator-semiconductor contact has been invoked to interpret the hole carrier concentration existing near the metal-semiconductor interface. Expression for the defect concentration is determined as a function of the temperature of DLTS peaks. AnEv+0.6eV defect with high concentration (N_T 〖10〗 DEGREES17 〖cm〗 DEGREES(-3)) was detected. The concentration of Ev+0.6eVcan be enhanced when the annealing temperature was increased from 750 to 900 degree C. Subjects: Laplace transformation Zinc oxide - Defects Deep level transient spectroscopy


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Product Details
  • ISBN-13: 9781361378908
  • Publisher: Open Dissertation Press
  • Publisher Imprint: Open Dissertation Press
  • Height: 279 mm
  • No of Pages: 166
  • Spine Width: 9 mm
  • Width: 216 mm
  • ISBN-10: 1361378905
  • Publisher Date: 27 Jan 2017
  • Binding: Paperback
  • Language: English
  • Series Title: English
  • Weight: 399 gr

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