les Houches This Winter School on "The Physics and Fabrication of Microstructures" originated with a European industrial decision to investigate in some detail the potential of custom-designed microstructures for new devices. Beginning in 1985, GEC and THOMSON started a collaboration on these subjects, supported by an ESPRIT grant from the Commission of the European Com­ munity. To the outside observer of the whole field, it appears clear that the world effort is very largely based in the United States and Japan. It also appears that cooperation and dissemination of results are very well organised outside Europe and act as a major influence on the development of new concepts and devices. In Japan, a main research programme of the Research and Development for Basic Technology for Future Industries is focused on "Future Electron Devices". In Japan and in the United States, many workshops are organised annually in order to bring together the major specialists in industry and academia, allowing fast dissemination of advances and contacts for setting up cooperative efforts.

Table of Contents:
I Physics and Engineering of Microfabrication.- High Resolution Lithography (Some Comments on Limits and Future Possibilities).- Submicron Lithography Tools.- Electron Beam Nanolithography.- The Spin Coating Process Mechanism.- Resists Patterning.- Dry Etching: Concepts, Methods and Applications.- Overlayers.- Self-Aligned Growth of Microstructures.- Laser-Induced Growth of Microstructures.- Structural Characterization of Superlattices by X-Ray Diffraction.- Recently Developed TEM Approaches for the Characterisation of Semiconductor Heterostructures and Interfaces.- Fabrication of Small Structures of Semiconductors and Metals.- Atomically Controlled Growth in 2, 1 and OD, and Applications.- Microstructure of Organic Mono- and Multilayers.- II Physics of Microstructures.- Fundamentals of Low Dimensional Physics.- Electron States in Semiconductor Microstructures.- Quantum Transport Theory for Small-Geometry Structures.- Noise in Microstructures.- Transport Physics of Multicontact Si MOS Nanostructures.- 1D Structures — Field Confinement Approach.- Excitons in GaAs Quantum Wells: Interface Disorder and Mobility.- Nonlinear Optics and Electro-Optics of Quantum Wells.- Quantum Interference Effects in Small Systems: Normal and Superconducting Networks.- 2D Localisation and Interaction Effects in Semiconductor Structures.- Optical Nonlinearities in Small Particles and Composite Materials.- Tunnel Currents and Electron Tunnelling Times in Semiconductor Heterostructure Barriers inPresenceanMagnetic Field.- III Perspectives in Microfabrication Applications.- Scaling Limits of Silicon VLSI Technology.- Three Part Series on Heterojunction Transistors.- CAD: Overview and Perspectives.- Silicon-on-Insulator Technology Leading Towards Three-Dimensional Integration ofMicroelectronics.- The Metal Base Transistors.- An Integrated Microfabrication System for Low-Dimensionality Structures and Devices.- Fabrication of Gate Array Interconnect Structures Using Direct-Write Deposition Processes.- Electronic Neural Computing.- IV Poster Session, Abstracts.- Fabrication of Submicron Structures Combining E-Beam and Deep-UV Exposure.- Fabrication of Short-Gate GaAs MESFETs by Electron Beam Lithography.- 2D Josephson Junction Networks.- Electric Field Heating of Supported and Free-Standing AuPd Fine Wires.- High-Frequency Limits of Quantum Noise Detectors Based on Superconducting Tunnel Junction Mixers.- Photoresponse and Transport Properties of a ‘Quasi’ Graded Gap Superlattice P-I-N Diode.- Disorder and Two-Dimensional Electronic Sub-Bands.- A Model for the Oscillatory Structure in the J(V) Characteristics of GaAs/(AlGa)As Tunneling Structures.- A Minute Metallic Sphere Close to Flat Metal Surface System: A Scanning Tunneling Microscope Problem.- A Calculation of the Effect of Subband Structure on the Thermopower of a Quasi-1D Wire.- The Effect of Electron-Electron Scattering on the Distribution Function in Semiconductors.- Index of Contributors.