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Semiconductors: Silicon Carbide and Related Materials: (Volume 954 Materials Science Forum)

Semiconductors: Silicon Carbide and Related Materials: (Volume 954 Materials Science Forum)

          
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About the Book

The Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018) was held on July 9-12, 2018 in Beijing, China. This collection compiled by results of this conference and reflect new developments in the areas of wide bandgap semiconductors (SiC, GaN, Ga2O3, and etc.) and their device fabrication, including advances in the bulk and epitaxial growth, material structure and property, photoelectron and electronic device. We hope that this edition will be interesting and useful for many specialists from the area of research and designing of semiconductor materials and semiconductor devices.



Table of Contents:
  • Preface
  • Chapter 1: Growth, Structure and Property of Wide Bandgap Semiconductors
  • Effect of Growth Chamber Structure on the Growth of Aluminum Nitride Crystals
  • Investigation of the 6-Folded Pattern in the Facetted Region of 4° Off-Axis 4H-SiC
  • Effects of Annealing Parameters on Epitaxial Graphene on SiC Substrates
  • Influence of the Etching Process on the Surface Morphology of 4H-SiC Substrate Used in the Epitaxial Graphene
  • Theoretical Calculation and Simulation for Microcantilevers Based on SiC Epitaxial Layers
  • Homoepitaxial Growth on Si-Face (0001) On-Axis 4H-SiC Substrates
  • Progress in Single Crystal Growth of Wide Bandgap Semiconductor SiC
  • Study on Carbon Particle Inclusions during 4H-SiC Growth by Using Physical Vapor Transport System
  • Electron Mobility due to Surface Roughness Scattering in Depleted GaAs Free-Standing Thin Ribbon
  • Measurement of Resistivity of Silicon Carbide by Discharge Time of Equivalent Capacitance of the Sample
  • Study of the Growth Temperature Measurement and Control for Silicon Carbide Sublimation
  • Phase Control of Ga2O3 Thin Films Grown by Metal-Organic Chemical Vapor Deposition
  • Microstructure of Interfacial Basal Plane Dislocations in 4H-SiC Epilayers
  • Chapter 2: Fabrication, Property and Application of Wide Bandgap Semiconductor Devices
  • Design, Fabrication and Characterization of a 4.5kV / 50A 4H-SiC PiN Rectifiers
  • Recent Progress of SiC MOSFET Devices
  • Improved Electrical Properties of 4H-SiC MOS Devices with High Temperature Thermal Oxidation
  • The Correlation between the Reduction of Interface State Density at the SiO2/SiC Interface and the NO Post-Oxide-Annealing Conditions
  • Reliability of 4H-SiC (0001) MOS Gate Oxide by NO Post-Oxide-Annealing
  • Low Defect Thick Homoepitaxial Layers Grown on 4H-SiC Wafers for 6500 V JBS Devices
  • Effect of Grinding-Induced Stress on Interface State Density of SiC/SiO2
  • GaN Schottky Barrier Diodes with TiN Electrode for Microwave Power Transmission
  • Research on Threshold Voltage Instability in SiC MOSFET Devices with Precision Measurement
  • Simulation of Electrothermal Characteristics of 1200V/75A 4H-SiC JBS
  • The Influence of Temperature Storage on Threshold Voltage Stability for SiC VDMOSFET
  • An Improved 4H-SiC Trench Gate MOSFETs Structure with Low On-Resistance and Reduced Gate Charge
  • An Optimized p+ Shielding 4H-SiC Trench Gate MOSFETs Structure with Floating Regions
  • Simplified Silicon Carbide MOSFET Model Based on Neural Network
  • The Effect of Circuit Parameters on Reverse Biased Safe Operating Area of SiC MOSFET
  • Effect of Tunneling on Small Signal Characteristics of IMPATT Diodes with SiC Heteropolytype Structures
  • Simulation on Large Signal and Noise Properties of (n)Si/(p)SiC Heterostructural IMPATT Diodes
  • Research on Performance Contrast between SiC MOSFET and Si IGBT Based on the Converter of Urban Rail Vehicles
  • Comparison of High Voltage SiC MOSFET and Si IGBT Power Module Thermal Performance
  • Thermo-Mechanical Reliability of 1200V-450A IGBT Module Considering Voids in the Solder Layer


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Product Details
  • ISBN-13: 9783035713855
  • Publisher: Trans Tech Publications Ltd
  • Publisher Imprint: Trans Tech Publications Ltd
  • Height: 240 mm
  • No of Pages: 226
  • Spine Width: 11 mm
  • Width: 170 mm
  • ISBN-10: 3035713855
  • Publisher Date: 17 Jun 2019
  • Binding: Paperback
  • Language: English
  • Series Title: Volume 954 Materials Science Forum
  • Weight: 520 gr


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