This is a collection of selected, peer reviewed papers from the 12th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS), September 21-24, 2014, Brussels, Belgium. The 71 papers are grouped as follows: Chapter 1: Cleaning for FEOL Applications, Chapter 2: Cleaning for FEOL Applications: Beyond-Si Active Area, Chapter 3: Wet Etching for FEOL Applications, Chapter 4: Wet Processing of High Aspect Ratio Structures, Chapter 5: Fluid Dynamics, Cleaning Mechanics, Chapter 6: Photo Resist Performance and Rework, Chapter 7: Cleaning for BEOL Interconnect Applications, Chapter 8: Cleaning for 3D Applications, Chapter 9: Contamination Control and AMC, and, Chapter 10: Cleaning and Wet Etching for Semiconductor Photo-Voltaic Cells.

Table of Contents:
Preface, Committee and Acknowledgement Chapter 1: Cleaning for FEOL Applications Necessity of Cleaning and its Application in Future Memory Devices Removal of Interfacial Layer in HfO2 Gate Stack by Post-Gate Cleaning Using NF3/NH3 Dry Cleaning Technique Catalyst Assisted Low Temperature Pre Epitaxial Cleaning for Si and SiGe Surfaces HF-Last Wet Clean in Combination with a Low Temperature GeH4-Assisted HCl In Situ Clean Prior to Si0.8Ge0.2-on-Si Epitaxial Growth Retardation Phenomenon of Oxide Removal during the Formation of Dual Gate Oxide via PR-Mask Wet Etching Aluminum Reduction in SC1 Metal Removal Efficiency in Deep Submicron Trenches by Wet Chemicals Impact of Surface Treatment of Si3N4 on Subsequent SiO2 Deposition Operation of a New Electrolyzed Cell Using Boron Doped Diamond Electrodes Chapter 2: Cleaning for FEOL Applications: Beyond-Si Active Area InGaAs (110) Surface Cleaning Using Atomic Hydrogen Surface Chemistry of GaAs(100) and InAs(100) Etching with Tartaric Acid Nanoscale Etching and Reoxidation of InAs Passivation of InSb(100) with 1-Eicosanethiol Self-Assembled Monolayers Cross-Contamination Risk Evaluation during Fabrication of III-V Devices in a Silicon Processing Environment Surface Cleaning of Graphene by CO2 Cluster Chapter 3: Wet Etching for FEOL Applications Process Control Challenges of Wet Etching Large MEMS Si Cavities Wet Etch Rate Behavior of Poly-Si in TMAH Solution at Various Ambient Gas Conditions Advanced Monitoring of TMAH Solution Effect of Dissolved Oxygen for Advanced Wet Processing Watermark Formation on Bare Silicon: Impact of Illumination and Substrate Doping Selective Nitride Etching with Phosphoric and Sulfuric Acid Mixtures Using a Single-Wafer Wet Processor Single Wafer Selective Silicon Nitride Removal with Phosphoric Acid and Steam Pt Etching Method at Low Temperature Using Electrolyzed Sulfuric Acid Solution Nickel Selective Etch for Contacts on Ge Based Devices Chapter 4: Wet Processing of High Aspect Ratio Structures Study of Wetting of Nanostructures Using Decoration by Etching Impact of Electrostatic Effects on Wet Etching Phenomenon in Nanoscale Region Freeze Drying of High Aspect Ratio Structures Chapter 5: Fluid Dynamics, Cleaning Mechanics Effect of DI-Water Dilution and Etchant Arm Movement on Spinning Type Wet Etch Effect of Nozzle Distance and Fluid Flow Rate in Jet Spray Wafer Cleaning Process Effects of Chamber Pressure on the Performance of CO2 Beam Cleaning Physical Chemistry of Water Droplets in Wafer Cleaning with Low Water Use Metal Etch in Advanced Immersion Tank with Precision Uniformity Using Agitation and Wafer Rotation Novel Slurry Injection System for Improved Slurry Flow and Reduced Defects in CMP Effect of Viscoelasticity of PVA Brush on Friction during Post-CMP Cleaning: A Guideline for Nodule Configuration Understanding the Formation of Circular Ring Defects in Post-CMP Cleaning Particle Measurement with a Liquid-Borne Particle Counter: Analytical Figures of Merit Fluid Flow and Defect Density Considerations when Drying Bumped Wafers Using Spin and Surface Tension Gradient Methods Characterization of Cavitation in Ultrasonic or Megasonic Irradiated Gas Saturated Solutions Using a Hydrophone Detection of HO2•/O2•- Radicals Formed in Aqueous Solutions Irradiated with Megasonic Waves Using a Cavitation Threshold (CT) Cell Set-Up Chapter 6: Photo Resist Performance and Rework Photo Lithography - Surface Preparation Interactions Study of Etchants’ Diffusion into a 248 nm Deep UV Photoresist during a Wet Etch Megasonic Enhanced Photoresist Strip with DiO3 Chapter 7: Cleaning for BEOL Interconnect Applications Wetting Behavior of Plasma Etch Residue Removal Solutions on Plasma Damaged and Repaired Porous ULK Dielectrics Effect of Downstream Plasma Treatment on Dissolution of Fluorocarbon Polymer in Organic Solvents Post Etch Residue Removal and Material Compatibility in BEOL Using Formulated Chemistries Characterization of Cu-BTA Organic Complexes on Cu during Cu CMP and Post Cu Cleaning TiN Hard Mask Cleans with SC1 Solutions, for 64nm Pitch BEOL Patterning Industrial Challenges of TiN Hard Mask Wet Removal Process for 14nm Technology Node TiN Metal Hardmask Residue Removal Formulation Development for Advanced Porous Low-K and Cu Interconnect Application Prevention of Unexpected Oxidation of Metal Layer by Removing Hydrogen Peroxide from Ultrapure Water and Diluted Hydrofluoric Acid Cost-of-Ownership Comparison of Single-Wafer Processes for Stripping Copper Pillar Bump Photomasks Chapter 8: Cleaning for 3D Applications The Role of Mass Transfer in Removal of Cross-Linked Sacrificial Layers in 3DI Applications Scaling the 3D Bumps Pitch from 20 to 10 μm, Focusing on the Wet Cu Seed Etch Process Development Adhesion Improvement through Plasma Surface Treatments on Palladium Surface Chapter 9: Contamination Control and AMC Control of HF Volatile Contamination in FOUP Environment by Advanced Polymers and Clean Gas Purge FOUP Material Influence on HF Contamination during Queue-Time Effect of FOUP Atmosphere Control on Process Wafer Integrity in Sub20 nm Device Fabrication Correlation of Cleaning Conditions and Wafer Out-Gassing Quantitative Analysis of Transition Metals Penetrating Silicon Substrate through SiN Film by Dopant Ion Implantation and Annealing Collection Efficiency of Noble Metallic Contaminants on Si Wafers with HF-Aqua Regia Mixtures for VPD-DC ICPMS Analysis Backside and Bevel Contamination Removal Focus Spot Reduction by Brush Scrubber Cleaning Upside-Down Residual Sessile Droplet: Watermarks on Wafers Backside Nuclear Magnetic Resonance Spectroscopy of Trace Organic Impurities Extracted from a Corrosion Inhibitor and a Semiaqueous Residue Remover Chapter 10: Cleaning and Wet Etching for Semiconductor Photo-Voltaic Cells Improvement of Silicon Solar Cell Substrates by Wet-Chemical Oxidation Studied by Surface Photovoltage Measurements Simplified Cleaning for a-Si:H Passivation of Wafers Bonded to Glass Investigation of Silicon Saw Damage Removal and Surface Texturing Using KOH for next Generation Silicon Solar Cells Impact of Fe and Cu Surface Contamination on High Efficiency Solar Cell Processes Ozone Base Cleaning: Impact on High Efficiency Interdigitated Back Contact Solar Cells Rapid Determination of Organic Contaminations on Wafer Surfaces Surface Cleaning and Passivation of Chalcogenide Thin Films Using S(NH4)2 Chemical Treatment