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Gallium Arsenide II: (Volume 12 Retrospective Collection)

Gallium Arsenide II: (Volume 12 Retrospective Collection)

          
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About the Book

Gallium Arsenide presents 63 important papers given at the second international conference on the Physics and Technology of GaAs and other III-V Compounds, held in Budapest, Hungary, Sept. 1986. The wealth of new information presented at the conference focussed on the following research areas:

Table of Contents:
The Preparation and Analysis of Active Layers Prepared by Si+ through Si3N4 Implantation into Sl GaAs/Cr/ Vanadium-Doped Bulk and Epitaxial GaAs, Studied by Photoluminescence and Photoconductivity The Use of Anisotropically Etched Gallium Arsenide Surfaces in Optoelectronics Real Structure of AS-Grown GaAs Crystals Growth of GaAs Epitaxial Layers at Low Temperatures Study of Selective Zinc Diffusion in InP Deposition Methods for Dielectric Films Distribution of Free Carrier Concentration across N-Type LEC-InP Wafers The Study of the Interface in GaAs-Ge and GaAs-Ge1-xSix Heterosystems LPE Growth of GaInAsP/InP DH Crystal Growth of Sl-GaAs and Its Investigation after Heat Treatment The Application of GaAs Epitaxy from the Ga-HCl-AsH3-H2 System to Micro-Wave Device Technology Dopant Distribution and Electrical Activation of Si Implanted GaAs by Short Time Annealing Influence of Substrate Defect Structure on the Structure Perfection of Heteroepitaxial Layers GaAs1-xPx/GaAs (x=0.4) The Influence of Growth Conditions on Electrical and Optical Properties of High Quality LPE GaAs Layers Growth of InGaAsP/InP Heterostructures for Optolectronic Application The Use of Ga-As-Bi-Solutions in the Preparation of GaAs Structures for Mesfet Technology Characterization of (Ga, In), (As, P)/InP-DHS by Means of IR-Microscopy, SEM Modes and Photoluminescence On Cr Behaviour during the VPE Growth of GaAs Epitaxial Layers Growth and Charactersization of GaAs Single Crystals with Low Dislocation Density Some Problems of Thickness Determination of Active Layer in InP/GalnAsP Heterostructures with the Doping and/or Composition Profiling Method Short Time Annealing of Ion Implanted GaAs Characterization of (Ga, In)As/InP Epitaxial Structures A New Method of Analysis of Solute Electromigration and Electrotransport in III-V Solutions Coordinate Dependance of the Impact Ionization Coefficients of Holes and Electrons in a Variable-Gap p-n Structure Chaotic Current Oscillations in Cr-Compensated GaAs On the Electrical Properties of Semi-Insulating GaAs DLTS, ODLTS and MCTS Study of Deep Traps in the VPE GaAs Schottky Barriers On the Influence of Dislocations on GaAs1-xPx Graded Layers Microwave Absorption Spectroscopy of Deep Levels in Semiconductors Deep Levels in GaAs Prepared by VPE Electron Paramagnetic Resonance of Electron-Irradiated GaAs Optical Studies of Nickel Impurity in GaP On a Temperature Activated Defect Reaction at the Isotype Al0.05Ga0.95As/Al0.35Ga0.65As Interface Grown by LPE Fine Structure of EL2 Absorption in GaAs Electron Irradiation Induced Structure in III-V Semiconductors Studied by Positron Lifetime Spectroscopy Spatially Resolved Luminescence of LEC Grown GaAs Crystals by Automatic Laser Scanning Universal Position-Changing Trend of 3d-Impurity Levels (0/+) and (0/-) in Semiconductors and Exciton Localization on 3d Impurities Theory of Auger Recombination Involving Traps in A3B5 Semiconductors: Application to States with One and Two Bound Particles in GaSb Rare Earth Impurity Luminescence in Gallium Arsenide And Gallium Phosphide Metastability of EL2 Defects in GaAs Investigation of Defects in Ion Implanted GaAs by Means of RBS and Optical Transmission Spectroscopy Antistructure Defects in Neutron-Irradited GaAs - A Comparison with EL2 Defects in As-Grown Crystals Luminescence of Manganese - Doped InGaAs and InAsSbP Alloys The Nature of Excess Currents in GaAlSb(As) Diodes of "Resonant" Composition Radiation Ordering Effects at GaAs Superfaces Contact Resistance Profiling - An Effective Tool for Failure Analysis of GaAs-GaAlAs Layer Structures Analysis of Non-Linear Light-Current Characteristics and Anomalous Pulse Responses of Semiconductor Lasers Generation of Schottky Metal Pattern on GaAs by the Electron Beam Resist Liftoff Technique I-V Pecularities in GaAs-CrAu Schottky and GaAs-Au Ion Mixed Contacts PdGe Non-Alloyed Contact to n-GaAs Study of High Sensitive GaAs Vertical Field-Effect Transistors Thermal and Temperature Properties of 1.3 μm InGaAsP/InP Stripe Lasers Modulation Properties of 1.3 μm Laser Diodes Technology and Electrical Characterization of GaAs Mesfet Structures Study of Dark Current in Ga1-xInxAs/GaAs Diodes The Dependence of InGaAs Photodiode Characteristics on the Composition of the Ternary On the Interaction of Au with GaP Degradation Processes in Visible GaP and GaAsP LED's Enhanced Diffusion of Zn along the SiO2Mask-GaAs Interface Efficient Metallization Scheme for GaAs Microacoustic Devices Some Properties of GaAs Schottky Barrier Photodetectors for 0,82 μm Wavelength Applications Impedance of GaAs-GaAsP- and GaP-Electrolyte Interfaces in the 10 kHz - 100 kHz Frequency Range GaAs Mesfet For S-Band Frequencies (Cr)-(Pt)-(Au)-Metallization as an Ohmic Contact System of III-V Semiconductor Surfaces (GaAs, InP)


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Product Details
  • ISBN-13: 9780878495559
  • Publisher: Trans Tech Publications Ltd
  • Publisher Imprint: Trans Tech Publications Ltd
  • Height: 240 mm
  • No of Pages: 374
  • Spine Width: 19 mm
  • Width: 170 mm
  • ISBN-10: 087849555X
  • Publisher Date: 01 Jan 1987
  • Binding: Paperback
  • Language: English
  • Series Title: Volume 12 Retrospective Collection
  • Weight: 1000 gr


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