Volume is indexed by Thomson Reuters CPCI-S (WoS). This proceedings volume contains 126 contributions from the 11th international meeting on Gettering and Defect Engineering in Semiconductor Technology GADEST 2005 held at “La Badine” at the Giens peninsula south of France.

Table of Contents:
Committees Preface Intrinsic Point Defects in Silicon: a Unified View from Crystal Growth, Wafer Processing and Metal Diffusion Precipitation Enhancement of "so Called" Defect-Free Czochralski Silicon Material Oxygen Precipitation in Nitrogen Doped CZ Silicon From Continuous to Quantized Charging Phenomena in Few Nanocrystals MOS Structures Passivation of Ge Nanocrystals in SiO2 The Properties of Hydrostatically Strained Ge and Si Nanocrystals in Silicon Dioxide Matrix Use of the Nitride to Reduce High-K Secondary Effects in Submicron MOSFETs Laser Assisted Formation on Nanocrystals in Plasma-Chemical Deposited SiNx Films Stability of Emission Properties of Silicon Nanostructures Blue Photoluminescence from Quantum Size Silicon Nanopowder Evolution of Quantum Electronic Features with the Size of Silicon Nanoparticles Embedded in a SiO2 Layer Obtained by Low Energy Ion Implantation Carrier Accumulation in Silicon-On-Insulator Structures Containing Ge Nanocrystals in the Burried SiO2 Layer Ge Nanoclusters in GeO2: Synthesis and Optical Properties µ-Raman Investigations on Hydrogen Gettering in Hydrogen Implanted and Hydrogen Plasma Treated Czochralski Silicon Morphological Transformation of Oxide Particles and Thresholds for Effective Gettering in Silicon Effect of Oxygen Precipitates on the Surface-Precipitation of Nickel on Cz-Silicon Wafers Electrical Properties of Clustered and Precipitated Iron in Silicon Gettering Mechanism of Cu in Silicon Calculated from First Principles Energetics and Kinetics of Defects and Impurities in Silicon from Atomistic Calculations Microscopic Mechanisms of Cobalt Disilicide Nucleation in Silicon The Influence of Nitrogen on Dislocation Locking in Float-Zone Silicon Amorphisation and Recrystallisation of Nanometre Sized Zones in Silicon Impact of Low Temperature Hydrogenation on Recombination Activity of Dislocations in Silicon FTIR Study of Precipitation of Implanted Nitrogen in CZ-Si Annealed under High Hydrostatic Pressure Influence of Magnetic Field on the Unlocking Stress for Dislocation Motion in Cz-Si Depending on Pre-Annealing Time Influence of Neutron Irradiation on Stress - Induced Oxygen Precipitation in Cz-Si Ab Initio Studies of Local Vibrations of Small Self-Interstitials Aggregates in Silicon "New Donors" in Czochralski Grown Silicon Annealed at T= 600°C under Compressive Stress Formation of the Buried Insulating SixNy Layer in the Region of Radiation Defects Created by Hydrogen Implantation in Silicon Wafer A Theoretical Study of Dislocation Formation at Surfaces in Covalent Materials: Effect of Step Geometry and Reactivity Peculiarities of the Initial Stage of Oxygen Precipitation in Irradiated Silicon The Effect of Thermal Treatments on the Annealing Behaviour of Oxygen-Vacancy Complexes in Irradiated Carbon-Doped Silicon Evolution of Hydrogen Related Defects in Plasma Hydrogenated Crystalline Silicon under Thermal and Laser Annealing Effect of Hydrogenation on Defect Reactions in Silicon Particle Detectors Metastable VO2 Complexes in Silicon: Experimental and Theoretical Modeling Studies Hydrogen-Related Donors in Silicon: Centers with Negative Electronic Correlation Energy Quantum-Chemical Simulation of Silicon Grain Boundaries Contaminated by Oxygen and Carbon Study of Au Diffusion in Nitrogen-Doped FZ Si Control of Oxygen Precipitation in Silicon by Infrared Laser Irradiation Electronic Properties and Thermal Stability of Defects Induced by MeV Electron/Ion Irradiations in Unstrained Germanium and SiGe Alloys Interstitial Carbon Related Defects in Low-Temperature Irradiated Si: FTIR and DLTS Studies VOn (n=3) Defects in Irradiated and Heat-Treated Silicon Electronic Properties and Structure of a Complex Incorporating a Self-Interstitial and two Oxygen Atoms in Silicon Impact of Hydrogenation on Electrical Properties of NiSi2 Precipitates in Silicon On the Electrical Activity of Misfit and Threading Dislocations in p-n Junctions Fabricated in Thin Strain-Relaxed Buffer Layers Novel Low-K Dielectric Obtained by Xenon Implantation in SiO2 Influence of Metal Contamination in the Measurement of p-Type Cz Silicon Wafer Lifetime and Impact on the Oxide Growth Structure Determination of Clusters Formed in Ultra-Low Energy High-Dose Implanted Silicon Impact of Hydrogen Implantation on Helium Implantation Induced Defects Bulk Radiation Damage Induced in Thin Epitaxial Silicon Detectors by 24 GeV Protons Defect Engineering in Ion Beam Synthesis of SiC and SiO2 in Si Electrical Passivation of Silicon Wafers Point Defects Interaction with Extended Defects and Impurities and Its Influence on the Si-SiO2 System Properties Magnetic-Field-Induced Modification of Properties of Silicon Lattice Defects Phase Transition on Surface of IV Group Semiconductors by Laser Radiation Stress - Dependent Out - Annealing of Defects in Self - Implanted Silicon A New Approach to Study the Damage Induced by Inert Gases Implantation in Silicon First Principles Calculation for Point Defect Behavior, Oxygen Precipitation and Cu Gettering in Czochralski Silicon On the Effect of Lead on Irradiation Induced Defects in Silicon Formation and Properties of Iron-Phosphorus and Iron-Phosphorus-Hydrogen Complexes in Silicon Determination of Effective Diffusion Coefficient of Copper in Silicon by Diffusion from Bulk into the Polysilicon Backside Effect of Self-Interstitials – Nanovoids Interaction on Two-Dimensional Diffusion and Activation of Implanted B in Si Silicon Doped with Sulfur as a Detector Material for High Speed Infrared Image Converters Theoretical Investigations of the Diffusion of Nitrogen-Pair Defects in Silicon General Model of Diffusion of Interstitial Oxygen in Silicon, Germanium and Silicon - Germanium Crystals Low-Temperature Radiation Enhanced Diffusion of Implanted Platinum in Silicon with Increased Controllability Defect Interaction Mechanisms between Antimony and Indium in Silicon Formation of Vacancies and Divacancies in Plane-Stressed Silicon Selective SiGe Etching Formed by Localized Ge Implantation on SOI Impact of the Growth Parameters on the Structural Properties of Si0.8Ge0.2 Virtual Substrates Characterization of SiGe Layer on Insulator by In-Plane Diffraction Method The Effect of Compound Composition and Strain on Vacancies in Si/SiGe Heterostructures Strained Silicon on Ultrathin Silicon-Germanium Virtual Substrates Radiation Induced Transformation of Impurity Centers in the Gate Oxide of Short-Channel SOI MOSFETS ?avity Effect in Hydrogen Ion Implanted Silicon-On-Insulator Structures Misfit Dislocations in SiGe/Si Heterostructures: Nucleation - Propagation - Multiplication Quantum Well Related Conductivity and Deep Traps in SiGe/Si Structures The Role of Silicon Interstitials in the Formation of Boron-Oxygen Defects in Crystalline Silicon Silicon Layers Grown on Siliconized Carbon Net: Producing and Properties Crack Detection and Analyses Using Resonance Ultrasonic Vibrations in Full-Size Crystalline Silicon Wafers Multicrystalline Silicon from Different Types of Bridgman Furnaces: Ingot and Cell Properties Behaviour of Natural and Implanted Iron during Annealing of Multicrystalline Silicon Wafers Improved P-Type or Raw N-Type Multicrystalline Silicon Wafers for Solar Cells Investigation of Defects in the Edge Region of Multicrystalline Solar Silicon Ingots Electrical and Optical Characterization of Thin Semiconductor Layers for Advanced ULSI Devices DLTS Study on Deep Levels Formed in Plasma Hydrogenated and Subsequently Annealed Silicon Defect Behaviour in Deuterated and Non-Deuterated n-Type Si Thermal Stability of Ti/Mo Schottky Contacts on p-Si and Defects Introduced in p-Si during Electron Beam Deposition of Ti/Mo EBIC and DLTS Study of Deformation Induced Defect Thermal Stability in n-Si Cobalt Contamination in Silicon Local Measurements of Diffusion Length and Chemical Character of Metal Clusters in Multicrystalline Silicon Comparison of Efficiencies of Different Surface Passivations Applied to Crystalline Silicon Improved Measurement of Carbon in Poly- and CZ Crystal Silicon by Means of Low Temperature FTIR Laser Scattering Tomography on Magnetic CZ-Si for Semiconductor Process Optimization Potential and Limitations of Electron Holography in Silicon Research Annealing Behaviour of New Nitrogen Infrared Absorption Peaks in CZ Silicon Atomic Environment of Positrons Annihilating in HT Cz-Si Crystal Infrared Absorption Measurement of Carbon Concentration down to 1x1014/cm3 in CZ Silicon EBIC Study of Electrical Activity of Stacking Faults in Multicrystalline Sheet Silicon The Build-Up of Strain Fields in Czochralski-Si Observed in Real Time by High Energy X-Ray Diffraction In-Line Monitor Introduction to Prevent Metallic Contamination in Wet Bench Measurement of Copper in p-Type Silicon Using Charge-Carrier Lifetime Methods The Employment of Cathodoluminescent Method for Characterization of Silicon Oxide - Silicon Interface Measurement of Oi in Heavily Boron Doped Chemical Thinned Silicon by Low Temperature FTIR Spectroscopy Silicon Carbide: Defects and Devices Ab Initio Investigations of Threshold Displacement Energies and Stability of Associated Defects in Cubic Silicon Carbide Electrical Characterizations of Hydrogenated 4H-SiC Epitaxial Samples Recent Progress in Understanding of Lattice Defects in Czochralski-Grown Germanium: Catching-up with Silicon Defect Removal, Dopant Diffusion and Activation Issues in Ion-Implanted Shallow Junctions Fabricated in Crystalline Germanium Substrates Theoretical Investigations of the Energy Levels of Defects in Germanium Some Recent Advances on the n-Type Doping of Diamond Helium Implantation Damage in SiC 6H(n+)/3C(n)/6H(p+) - SiC Structures Grown by Sublimation Epitaxy Current Transport by Defects in Pr2O3 High K Films Pulsed Laser Deposition of Hafnium Oxide on Silicon Modification of Silicon Oxide by High Energy Electron Beam Calibration Factor for Determination of Interstitial Oxygen Concentration in Germanium by Infrared Absorption Structural Characterization of Epitaxial Si / Pr2O3 / Si(111) Heterostructures Silicon Based Light Emitters for On-Chip Optical Interconnects Rare Earth Ion Implantation for Silicon Based Light Emission SiGe Light-Emitting Diodes and Their Characteristics in the Region of Band-to-Band Transitions Fine Structure of Dislocation Related PL Bands D1 and D2 in Silicon Dislocation Related PL of Multi-Step Annealed Cz-Si Samples Defect Formation in MBE Er-Doped Si Light-Emitting Structures Atomistic Nanodevice Simulation Interfacing Biology with Electronic Devices Thin SiGe Relaxed Buffer for Strain Adjustment