This collection aims to address the fundamental aspects, as well as the technological problems, which are associated with defects in electronic materials and devices.

Table of Contents:
Preface Committeess I. Multi-Crystalline Silicon for Solar Cells Influence of Defects on Solar Cell Characteristics Dislocation Engineering in Multicrystalline Silicon Grain Boundaries in Multicrystalline Si Analysis of Heterogeneous Iron Precipitation in Multicrystalline Silicon Growth of Silicon Carbide Filaments in Multicrystalline Silicon for Solar Cells Analysis of Silicon Carbide and Silicon Nitride Precipitates in Block Cast Multicrystalline Silicon Investigations on the Behaviour of Carbon during Inductive Melting of Multicrystalline Silicon An Investigation into Fracture of Multi-Crystalline Silicon II. Advanced Semiconductor Materials: Strained Si, SOI, SiGe, SiC Strained Silicon Devices Novel Trends in SOI Technology for CMOS Applications Advanced Si-based Semiconductors for Energy and Photonic Applications Si Wafer Bonding: Structural Features of the Interface Buried Insulating Layer Formation in Cz Si Wafers after Helium Implantation, Nitrogen Plasma Treatment and Annealing Growth of Heavily Phosphorus-Doped (111) Silicon Crystals Semi-Insulating Silicon for Microwave Devices III. Impurities (Oxygen, Carbon, Nitrogen, Metals) and Point Defects in Si and SiGe Can Impurities be Beneficial to Photovoltaics? Properties of Fast-Diffusing Oxygen Species in Silicon Deduced from the Generation Kinetics of Thermal Donors The Production of Vacancy-Oxygen Defects in Electron-Irradiated Cz-Si Initially Treated at High Temperatures and High Pressures Divacancy-Oxygen and Trivacancy-Oxygen Complexes in Silicon: Local Vibrational Mode Studies Low-Temperature Elastic Softening due to Vacancies in Boron-Doped FZ Silicon Crystals Vacancies and Self-Interstitials Dynamics in Silicon Wafers Interaction of Point Defects with Impurities in the Si-SiO2 System and its Influence on the Properties of the Interface Anomalous Out-Diffusion Profiles of Nitrogen in Silicon DLTS Studies of Carbon Related Complexes in Irradiated N- and P-Silicon Copper In-Depth Distribution in Hydrogen Implanted Cz Si Wafers Subjected to Two-Step Annealing Radiation Defects in Silicon: Effect of Contamination by Platinum Atoms Review of Stress Effects on Dopant Solubility in Silicon and Silicon-Germanium Layers Oxygen Diffusion in Si1-xGex Alloys The Effect of Germanium Doping on the Production of Carbon–Related Defects in Electron-Irradiated Czochralski Silicon IV. Modeling and Simulation of Growth, Gettering and Characterization Numerical Analysis of mc-Si Crystal Growth Molecular Simulation on Interfacial Structure and Gettering Efficiency of Si (110)/(100) Directly Bonded Hybrid Crystal Orientation Substrates Optimization of Silicon Ingot Quality by the Numerical Prediction of Bulk Crystal Defects Rate Equation Modeling, Ab Initio Calculation, and High Sensitive FTIR Investigations of the Early Stages of Oxide Precipitation in Vacancy-Rich CZ Silicon Thermal Optimization of Cz Silicon Single Crystal Growth Simulation of Iron Distribution after Crystallization of mc Silicon Comparison of Efficiency and Kinetics of Phosphorus-Diffusion and Aluminum Gettering of Metal Impurities in Silicon: a Simulation study Effect of Growth Conditions and Catalyst Material on Nanowhisker Morphology: Monte Carlo Simulation Versatile Simulation Tool and Novel Measurement Method for Electrical Characterization of Semiconductors Simulation of XBIC Contrast of Precipitates in Si V. Defect Aspects and Defect Engineering Dislocation Nucleation in Heteroepitaxial Semiconducting Films Impurity Engineering of Czochralski Silicon The Role of the Interstitial Oxygen in the Recovery and Evolution of the Boron Implantation Damage Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening Study of the Mechanisms of Oxygen Precipitation in RTA Annealed Cz-Si Wafers Electronic States of Oxygen-Free Dislocation Networks Produced by Direct Bonding of Silicon Wafers Dislocation States and Deformation-Induced Point Defects in Plastically Deformed Germanium Defect Generation during Plastic Deformation of Si-Rich Cz-Grown SiGe Crystals Formation of Radiation-Induced Defects in Si Crystals Irradiated with Electrons at Elevated Temperatures Role of Ion Irradiation Induced Lattice Defects on Nanoscale Capacitive Behavior of Graphene Boron and Phosphorus Implantation Induced Electrically Active Defects in p-Type Silicon Accumulation of Hydrogen within Implantation-Damaged Areas in Processed Si:N and Si:O Influence of Hydrogen on the Structural Stability of Annealed Ultrathin Si/Ge Amorphous Layers Demonstration of Defect-Induced Limitations on the Properties of Au/3C-SiC Schottky Barrier Diodes Suppression of Pores Formation on a Surface of p-Si by Laser Radiation VI. Gettering and Hydrogen Passivation Hydrogenation in Crystalline Silicon Materials for Photovoltaic Application Hydrogen-Induced Passivation of Grain-Boundary Defects in Polycrystalline Silicon Bulk Passivation of Defects in Multi-Crystalline Silicon Solar Cells by a-SiNx:H Layers Passivation of Si Surfaces Investigated by In Situ Photoluminescence Techniques Gettering Efficiency of Si (110)/(100) Directly Bonded Hybrid Crystal Orientation Substrates Trans-RP Gettering and Out-Diffusion of Oxygen Implanted into Highly B-Doped Silicon Iron Gettering in CZ Silicon during the Industrial Solar Cell Process Study of Internal versus External Gettering of Iron during Slow Cooling Processes for Silicon Solar Cell Fabrication Effect of Oxygen in Low Temperature Boron and Phosphorus Diffusion Gettering of Iron in Czochralski-Grown Silicon Far-Action Defects Formation and Gettering in 6H-SiC Lely Crystals Irradiated by Bi VII. Defect and Impurity Characterization Quantitative Iron Concentration Imaging EBIC Investigation of the Influence of Hydrogen Passivation on Thin-Film Polycrystalline Silicon Solar Cells Obtained by Aluminium Induced Crystallization and Epitaxy Characterization of Thin Film Photovoltaic Material Using Photoluminescence and Raman Spectroscopy Comparative Study of Electrical and Optical Properties of Plastically Deformed Silicon Spatially Resolved Defect Analysis in Cz-Silicon after Copper-Nickel Co-Precipitation by Virtue of Light-Beam-Induced Current Measurements In Situ Observation of Oxygen Precipitation in Silicon with High Energy X-Rays Delineation of Microdefects in Silicon Substrates by Chromium-Free Preferential Etching Solutions and Laser Scattering Tomography An Express Method for the Study of Planar Homogeneity of Diffusion Lenght in Multicrystalline Solar Silicon Point Defects in ?-Irradiated Germanium: High- and Low- Momentum Positron Annihilation Study Before and After n-p-Conversion Electron-Beam-Induced Current Study of Breakdown Behavior of High-K Gate MOSFETs Characterization of Semiconductor Films Epitaxially Grown on Thin Metal Oxide Buffer Layers SEM Characterization of Silicon Layers Grown on Carbon Foil Investigation of the Mechanical Properties of Thin Films by Bulge Test Defect Characterization of Poly-Ge and VFG-Grown Ge Material Cathodoluminescence of SiO2/Si System Correlation Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC VIII. Nanostructures and New Devices Current Status of Graphene Transistors Theoretical Study of Ionized Impurities in Silicon Nanowire MOS Transistors Scaling in Quantum Transport in Silicon Nano-Transistors Anisotropic Strain – Anisotropic Heating Engineering for Silicon Nanocrystals in SiO2 Silicon Cluster Aggregation in Silica Layers Feedback Effect on the Self-Organized Nanostructures Formation on Silicon upon Femtosecond Laser Ablation Confinement Levels in Passivated SiGe/Si Quantum Well Structures IX. Silicon-Based Photonics and Defect Luminescence Silicon Periodic Structures and their Liquid Crystal Composites Dependence of Luminescence Properties of Bonded Si Wafers on Surface Orientation and Twist Angle. D-Line Emission from Small Angle Grain Boundaries in Multicrystalline Si Determination of the Origin of Dislocation Related Luminescence from Silicon Using Regular Dislocation Networks Structural and Luminescent Properties of Implanted Silicon Layers with Dislocation-Related Luminescence Optimization of the Luminescence Properties of Silicon Diodes Produced by Implantation and Annealing