Volume is indexed by Thomson Reuters CPCI-S (WoS). The papers contained herein cover the most important and timely issues in the field of “Gettering and Defect Engineering in Semiconductor Technology”, ranging from the theoretical analysis of defect problems to practical engineering solutions, with the emphasis on Si-based materials. Apart from the traditional topics of defect and materials engineering, characterization, modeling and simulation, and the co-integration of various material classes, topics such as materials for solar cells and photonics are discussed. Defects in graphene and in nanocrystals and nanowires are also treated, making this a very up-to-date survey of the field.

Table of Contents:
Preface and Committees Plenary Intrinsic Point Defects in Silicon Crystal Growth Chapter 1: Silicon-Based and Advanced Semiconductor Materials Stimulated Creation of the SOI Structures with Si Nano-Clustersw by Low–Dose SIMOX Technology Room Temperature Direct Band-Gap Emission from an Unstrained Ge P-I-N LED on Si Electron Mobility in Moderately Doped Si1-xGex Impact of Hydrostatic Pressure Applied at Annealing on Homogeneity of Si-Ge Single Crystals Chapter 2: Nanocrystals, Nanowires, Quantum Dots Characterization of Structural Defects in Germanium Epitaxially Grown on Nano-Structured Silicon Acceptor Deactivation in Silicon Nanowires Analyzed by Scanning Spreading Resistance Microscopy Time-Resolved Photocurrent Measurements on PbS Nanocrystal Schottky-Contact Photovoltaic Cells Synthesis of Light Emitting Ge Nanocrystals by Reactive RF Sputtering Electrical Study of Self-Assembled Ge Quantum Dots Embedded in P-Type Silicon. Temperature Dependent Capacitance Voltage and DLTS Study C-V - and DLTS-Investigations of Pyramid-Shaped Ge Quantum Dots Embedded in N-Type Silicon Chapter 3: Crystalline Silicon for Solar Cells Silicon PV Wafers: Mechanical Strength and Correlations with Defects and Stress Classification of Recombination-Active Defects in Multicrystalline Solar Cells Made from Upgraded Metallurgical Grade (UMG) Silicon Coefficient of Diffusion in Crystals of Si1-xGex: Role of Preexponential Factor Characterization of Traps in Crystalline Silicon on Glass Film Using Deep-Level Transient Spectroscopy Recombination Activity of Twin Boundaries in Silicon Ribbons Fast Light-Induced Solid Phase Crystallization of Nanometer Thick Silicon Layers on Quartz Analysis of Electron-Beam Crystallized Large Grained Si Films on Glass Substrate by EBIC, EBSD and PL Chapter 4: Co-Integration of Si and Ge, III-V, Graphenes, Organo-Silica Devices Surface Corrugation and Stacking Misorientation in Multilayers of Graphene on Nickel Electronic Properties of ZnO/Si Heterojunction Prepared by ALD. Chapter 5: Point Defects in Si The Nature of Lifetime-Degrading Boron-Oxygen Centres Revealed by Comparison of P-Type and N-Type Silicon IR Studies on VON, CIOI and CICS Defects in Ge-Doped Cz-Si Formation of Copper-Related Deep-Level Centers in Irradiated P-Type Silicon Towards the Tailoring of P Diffusion Gettering to As-Grown Silicon Material Properties Peculiarities of Formation and Annealing of VO-Related Defects in Ge Doped with Tin 1207cm-1 Infrared Absorption Band in Carbon-Rich Silicon Crystal Boron-Oxygen-Related Defect in Silicon Hydrogen-Induced Dissociation of the Fe-B Pair in Boron-Doped P-Type Silicon Evolution of Oxygen Associated Defects in Cz Silicon during Thermal Annealing Treatments: Comparison between Experiment and Simulation Hydrogen Decoration of Vacancy Related Complexes in Hydrogen Implanted Silicon Chapter 6: Extended Defects Microdefects in Heavily Phosphorus-Doped Czochralski Silicon Recombination at Oxide Precipitates in Silicon Iron Gettering at Slip Dislocations in Czochralski Silicon Formation of Voids in SiO2/Si Substrate by Zn Implantation and Thermal Annealing Effects of Ultrasonic Cleaning on Carrier Lifetimes and Photovoltage in Monocrystalline Silicon XBIC Investigation of the Grain Boundaries in Multicrystalline Si on the Laboratory X-Ray Source Chapter 7: Defects and Interfaces Dislocation Structure, Electrical and Luminescent Properties of Hydrophilically Bonded Silicon Wafer Interface Analysis of Contaminated Oxide-Silicon Interfaces Nitrogen Enhanced Oxygen Precipitation in Czochralski Silicon Wafers Coated with Silicon Nitride Films Mechanisms of Dislocation Network Formation in Si(001) Hydrophilic Bonded Wafers Stress Relaxation Mechanism by Strain in the Si-SiO2 System and its Influence on the Interface Properties Interaction of Point Defects with Impurities in the Si-SiO2 System and its Influence on the Interface Properties Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements Chapter 8: Defect and Impurity Characterization Transmission Electron Microscopy Investigations of Metal-Impurity-Related Defects in Crystalline Silicon Spectroscopic Studies of Iron and Chromium in Germanium New Results on the Bound Exciton Luminescence in Germanium Investigation of Germanium Implanted with Hydrogen for Layer Transfer Applications Scanning X-Ray Excited Optical Luminescence Microscopy as a New Tool for the Analysis of Recombination Active Defects in Multi-Crystalline Silicon TEM Characterization of near Sub-Grain Boundary Dislocations in Directionally Solidified Multicrystalline Silicon Positron Probing of Point Radiation Defects in Proton - Irradiated FZ-Silicon Single Crystals Defect Investigations via Positron Annihilation Spectroscopy on Proton Implanted Silicon Oxygen Precipitation Studied by X-Ray Diffraction Techniques Investigation of Defects in Solar Cells and Wafers by Means of Magnetic Measurements Luminescent and Structural Properties of Self-Implanted Silicon Layers in Relation to their Fabrication Conditions Carrier Lifetime Studies in Diode Structures on Si Substrates with and without Ge Doping In Situ Observation of the Oxygen Nucleation in Silicon with X-Ray Single Crystal Diffraction Structural Defect Studies of Semiconductor Crystals with Laue Topography Deep Level Defects in 4H-SiC Schottky Diodes Examined by DLTS Chapter 9: Gettering, Passivation and Defect Engineering Conversion Efficiency of Radiation Damage Profiles into Hydrogen-Related Donor Profiles Polycrystalline Silicon Layers with Enhanced Thermal Stability Radiation-Induced Defect Reactions in Tin-Doped Ge Crystals Hydrogenated Radiation Defects in Silicon: Isotopic Effect of Hydrogen and Deuterium Accumulation of VO Defects in N-Si at High-Temperature Pulse Electron Irradiation: Generation and Annealing Kinetics, Dependence on Irradiation Intensity Tailoring the Electrical Properties of Undoped GaP Solid Phase Epitaxial Re-Growth of Amorphous Layer in Si:Si Annealed under Enhanced Hydrostatic Pressure Low-Temperature Diffusion of Transition Metals at the Presence of Radiation Defects in Silicon Analysis of Auger Recombination Characteristics in High Resistivity Si and Ge Chapter 10: Advanced Solar Cells Studying Light Soaking of Solar Cells by the Use of Solar Simulator Implementation of Highly Resistive Emitter Solar Cells in a Production Environment using an Inline Doping System Light Trapping in Monocrystalline Si Solar Cells Using Back–Side Diffraction Gratings Chapter 11: Silicon-Based Photonics Visible Light-Emitting Hydrogenated Nanocrystalline Silicon-on-Insulator Films: Formation and Properties Defect Engineering in 2D Photonic Crystals Fabricated by Electrochemical Etching of Silicon Photocurrent and Photoluminescence of Amorphous Silicon Nanoclusters Embedded in Silicon Suboxide Matrix Chapter 12: Modeling and Simulation Bistable Defects as the Cause for NBTI and RTN The Mechanical Modeling of Oxygen-Containing Precipitates in Silicon Wafers on Different Stages of the Getter Formation Process Reconstruction of a High Angle Tilt (110)/(001) Boundary in Si Using O-lattice Theory Homogeneous and Heterogeneous Nucleation of Oxygen in Si-CZ Application of Double Crucible in Cz Si Crystal Growth Modeling of Lifetime Distribution in a Multicrystalline Silicon Ingot