The book includes both fundamental and technological aspects of defects in semiconductor materials and devices, including photovoltaics. Volume is indexed by Thomson Reuters CPCI-S (WoS). The 74 papers are grouped as follows: I. Defect engineering in silicon solar cells; II. Structural and production issues in cast silicon materials for solar cells; III. Characterisation of silicon for solar cells; IV. Intrinsic point defects in silicon; V. Light impurities in silicon-based materials; VI. Metals in silicon: fundamental properties and gettering; VII. Extended and implantation-related defects in silicon; VIII. Surfaces, passivation and processing; IX. Germanium-based devices and materials; X. Semiconductors other than silicon and germanium; XI. Nanostructures and new materials systems.

Table of Contents:
Preface, Committees, Invited Speakers and Sponsor I. Defect Engineering in Silicon Solar Cells Light-Induced Boron-Oxygen Recombination Centres in Silicon: Understanding their Formation and Elimination Iron Management in Multicrystalline Silicon through Predictive Simulation: Point Defects, Precipitates, and Structural Defect Interactions External and Internal Gettering of Interstitial Iron in Silicon for Solar Cells Precipitation of Interstitial Iron in Multicrystalline Silicon Direct Observation of Carrier Trapping Processes on Fe Impurities in mc-Si Solar Cells On the Trade-Off between Industrially Feasible Silicon Surface Preconditioning Prior to Interface Passivation and Iron Contaminant Removal Effectiveness II. Structural and Production Issues in Cast Silicon Materials for Solar Cells Defect Generation and Propagation in Mc-Si Ingots: Influence on the Performance of Solar Cells Characterisation of Dislocation-Content in Multicrystalline-Silicon Wafers The Impact of Dislocation Structure on Impurity Decoration of Dislocation Clusters in Multicrystalline Silicon Analysis of Inhomogeneous Dislocation Distribution in Multicrystalline Si Properties of Strong Luminescence at 0.93 eV in Solar Grade Silicon 10 cm Diameter Mono Cast Si Growth and its Characterization Characterization of Residual Strain in Si Ingots Grown by the Seed-Cast Method III. Characterisation of Silicon for Solar Cells Overview and Latest Developments in Photoconductance Lifetime Measurements in Silicon Efficiency-Limiting Recombination in Multicrystalline Silicon Solar Cells Photoluminescence Imaging of Silicon Bricks Inline PL Inspection and Advanced Offline Evaluation of Passivation Defects, Charge and Interfaces Transition Metal Precipitates in Mc Si: A New Detection Method Using 3D-FIB A Comparison of EBIC, LBIC and XBIC Methods as Tools for Multicrystalline Si Characterization IV. Intrinsic Point Defects in Silicon Properties of Point Defects in Silicon: New Results after a Long-Time Debate Fast and Slow Vacancies in Silicon Theoretical Study of the Impact of Stress on the Behavior of Intrinsic Point Defects in Large-Diameter Defect-Free Si Crystals V. Light Impurities in Silicon-Based Materials First Principle Study of the Diffusion of Oxygen and Oxygen Complexes in Si, SiGe Solid Solutions and Si Nanocrystals The Trivacancy and Trivacancy-Oxygen Family of Defects in Silicon Monoisotopic 28Si in Spin Resonance Spectroscopy of Electrons Localized on Shallow Donors Light-Element Impurities and their Reactions in Multicrystalline Si Isotope-Dependent Phonon Trapping at Defects in Semiconductors Formation of Single and Double Donor States of Trivacancy-Oxygen Complexes in P-Type Silicon Interactions of Self-Interstitials with Interstitial Carbon-Interstitial Oxygen Center in Irradiated Silicon: An Infrared Absorption Study PL and DLTS Analysis of Carbon-Related Centers in Irradiated P-Type Cz-Si Infrared Defect Dynamics of Irradiation Induced Complexes in CZ Silicon - C-Rich Case Calibration of IR Absorbance in Highly Nitrogen Doped Silicon Dislocation Motions in Czochralski Silicon Wafers Treated by Rapid Thermal Processing under Different Atmospheres VI. Metals in Silicon: Fundamental Properties and Gettering New Results on the Electrical Activity of 3d-Transition Metal Impurities in Silicon Metastable CuVO* Complex in Silicon Deep Energy Levels of Platinum-Hydrogen Complexes in Silicon Association of FeB Pairs under Illumination Proximity Gettering of Slow Diffuser Contaminants Influence of Cu Concentration on the Getter Efficiency of Dislocations and Oxygen Precipitates in Silicon Wafers Polycrystalline Silicon Gettering Layers with Controlled Residual Stress VII. Extended and Implantation-Related Defects in Silicon Charge Carrier Transport along Grain Boundaries in Silicon Impact of Electric Field on Thermoemission of Carriers from Shallow Dislocation-Related Electronic States Fabrication of Light-Emitting Diodes with Dislocation-Related Luminescence by Annealing of Electron-Irradiated Silicon Multiple Proton Implantations into Silicon: A Combined EBIC and SRP Study Positron Probing of Vacancy Volume of Thermally Stable Deep Donors Produced with 15 MeV Protons in n-FZ-Si:P Crystals Radiation Damage of Carrier Lifetime and Conductivity in Sn and Pb Doped n-Si VIII. Surfaces, Passivation and Processing Effect of Hydrogen for Preservation of Reconstructed Surfaces Kinetics of Hydrogen Motion via Dislocation Network in Hydrophilically Direct Bonded Silicon Wafers Electric Field Effect Surface Passivation for Silicon Solar Cells Effect of Ultrasonic Treatment on the Defect Structure of the Si-SiO2 System Characterization of Electrical Contacts on Silicon (100) after Ablation and Sulfur Doping by Femtosecond Laser Pulses Smoothening by Self-Diffusion of Silicon during Annealing in a Rapid Processing Chamber Anisotropy of the Porous Layer Formation Rate in Silicon with Various Acceptor Concentrations Queue Time Sensitivity Analysis Methodology IX. Germanium-Based Devices and Materials Luminescence from Germanium and Germanium on Silicon High n-Type Doping in Ge for Optical Gain and Lasing Reduction of Structural Defects in Ge Epitaxially Grown on Nano-Structured Si Islands on SOI Substrate Study of Photovoltage Decays in Nanostructured Ge/Si Vacancy-Related Defects in Ge Doped with Tin First-Principles Analysis on Interaction between Dopant (Ga, Sb) and Contamination Metal Atoms in Ge Crystals Production and Annealing of Defects in Proton-Irradiated n-Ge X. Semiconductors other than Silicon and Germanium Influences of Charged Dislocations on Performance of III-V Compound Semiconductor FinFETs Unstable Luminescence and "Memory Effect" in Nitrides Irradiated by Electron Beam Silicon and Oxygen in High-Al-Content AlGaN: Incorporation Kinetics and Electron Paramagnetic Resonance Study Defect Control in Zinc Oxynitride Semiconductor for High-Performance and High-Stability Thin-Film Transistors Point Defects in 4H-SiC Epilayers Introduced by 4.5 MeV Electron Irradiation and their Effect on Power JBS SiC Diode Characteristics Investigation of Point Defects Modification in Silicon Dioxide by Cathodoluminescence XI. Nanostructures and New Materials Systems Synthesis and Light Absorption Mechanism in Si or Ge Nanoclusters for Photovoltaics Applications Homo- and Hetero-Structure Formation in Semiconductors by Laser Radiation: First Stage of Quantum Cones Formation Electrical and Optical Characterisation of Silicon Nanocrystals Embedded in SiC Electronic States and Optical Gap of Phosphorus-Doped Silicon Nanocrystals Embedded in a Silica Host Matrix Photoluminescence and Raman Scattering Behavior of Si Rich Silicon Oxynitride Films Annealed at Different Temperatures Defects Related to Sb-Mediated Ge Quantum Dots ZnO Nanoparticle Formation in Si by Co-Implantation of Zn+ and O+ Ions